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PDF IRFP22N50A Data sheet ( Hoja de datos )
| Número de pieza | IRFP22N50A | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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IRFP22N50A, SiHFP22N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
120
32
52
Single
0.23
TO-247AC
D
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Full Bridge Converters
• Power Factor Correction Boost
TO-247AC
IRFP22N50APbF
SiHFP22N50A-E3
IRFP22N50A
SiHFP22N50A
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 4.87 mH, Rg = 25 , IAS = 22 A (see fig. 12).
c. ISD 22 A, dI/dt 190 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 30
22
14
88
2.2
1180
22
28
277
4.8
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91207
S11-0446-Rev. C, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Free Datasheet http://www.Datasheet4U.com
1 page  
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFP22N50A, SiHFP22N50A
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T
IAS
0.01 Ω
+
- VDD
A
Fig. 12a - Unclamped Inductive Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91207
S11-0446-Rev. C, 14-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFP22N50A.PDF ] | |
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