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PDF D3N50 Data sheet ( Hoja de datos )
| Número de pieza | D3N50 | |
| Descripción | AOD3N50 | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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1. D3N50  Hay una vista previa y un enlace de descarga de D3N50 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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AOD3N50
3A, 500V N-Channel MOSFET
General Description
The AOD3N50 has been fabricated using an
advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
TO-252
D-PAK
Top View
Bottom View
D
Features
VDS (V) = 600V @ 150°C
ID = 2.8A
RDS(ON) < 3Ω (VGS = 10V)
100% UIS Tested!
100% R g Tested!
D
GS
SG
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximium
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current B
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
ID
IDM
IAR
EAR
EAS
2.8
1.8
9.0
2.0
60
120
Peak diode recovery dv/dt
dv/dt
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
57
0.45
Junction and Storage Temperature Range TJ, TSTG
-50 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
Thermal Characteristics
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambient A,G
RθJA
45
55
Maximum Case-to-Sink A
RθCS
-
0.5
Maximum Junction-to-Case D,F
RθJC
1.8
2.2
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.Datasheet4U.com
1 page  
AOD3N50
60
50
40
30
20
10
0
0
25 50 75 100 125
TCASE (°C)
Figure 12: Power De-rating (Note B)
150
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
400
TJ(Max)=150°C
300 TA=25°C
200
100
0
0.0001
0.001
0.01
0.1 1
Pulse Width (s)
10
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
100
10
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
1 RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
PD
Single Pulse
-50 to 175
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
100
1000
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet D3N50.PDF ] | |
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