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PDF IRF1324LPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF1324LPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 97353A
IRF1324SPbF
IRF1324LPbF
HEXFET® Power MOSFET
D VDSS
24V
RDS(on) typ.
1.3mΩ
max.
ID (Silicon Limited)
1.65mΩ
c340A
S ID (Package Limited) 195A
GDS
D2Pak
IRF1324SPbF
GDS
TO-262
IRF1324LPbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
kJunction-to-Case
jkJunction-to-Ambient (PCB Mounted, steady-state)
www.irf.com
D
Drain
S
Source
Max.
340
240
195
1420
300
2.0
± 20
0.46
-55 to + 175
300
Units
A
W
W/°C
V
V/ns
°C
270
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
Max.
0.50
40
mJ
A
mJ
Units
°C/W
1
09/24/09
Free Datasheet http://www.Datasheet4U.com
1 page  
IRF1324S/LPbF
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
τ3 τ3
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
R4R4
τCτ
Ri (°C/W)
0.0125
0.0822
τi (sec)
0.000008
0.000078
τ4τ4 0.2019 0.001110
0.2036 0.007197
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
0.01
100
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-01
www.irf.com
5
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF1324LPBF.PDF ] | |
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