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PDF IRF1324S-7PPBF Data sheet ( Hoja de datos )

Número de pieza IRF1324S-7PPBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF1324S-7PPBF Hoja de datos, Descripción, Manual

Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
IRF1324S-7PPbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
24V
0.8mΩ
cmax.
1.0mΩ
G
ID (Silicon Limited)
429A
S ID (Package Limited)
240A
D
G
Gate
S
SS
S
S
G
D2Pak 7 Pin
D
Drain
S
Source
Base part number
IRF1324S-7PPbF
Package Type
D2Pak-7Pin
Standard Pack
Form
Tube
Tape and Reel Left
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÙAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
kJunction-to-Case
jJunction-to-Ambient (PCB Mount) , D2Pak
Quantity
50
800
Orderable Part Number
IRF1324S-7PPbF
IRF1324STRL-7PP
Max.
™429
™303
240
1640
300
2.0
± 20
1.6
-55 to + 175
300 (1.6mm from case)
230
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
0.50
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 08, 2014
Free Datasheet http://www.Datasheet4U.com

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IRF1324S-7PPBF pdf
IRF1324S-7PPbF
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
τ3 τ3
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
R4R4
τCτ
Ri (°C/W)
0.02070
0.08624
τi (sec)
0.000010
0.000070
τ4τ4 0.24491 0.001406
0.15005 0.009080
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
100
0.05
0.10
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Δ Tj = 150°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-01
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 08, 2014
Free Datasheet http://www.Datasheet4U.com

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