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PDF J464 Data sheet ( Hoja de datos )
| Número de pieza | J464 | |
| Descripción | P-Channel MOSFET ( Transistor ) - 2SJ464 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de J464 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SJ464
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
2SJ464
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
Unit: mm
• 4-V gate drive
• Low drain-source ON resistance: RDS (ON) = 64 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 15 S (typ.)
• Low leakage current: IDSS = −100 μA (max) (VDS = −100 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
−100
−100
±20
−18
−72
45
937
−18
4.5
150
−55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = 3.56 mH, RG = 25 Ω, IAR = −18 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2009-09-29
Free Datasheet http://www.Datasheet4U.com
1 page  
2SJ464
1
0.5 Duty = 0.5
0.3 0.2
0.1
0.05
0.03
0.1
0.05
0.02
0.01
0.01
0.005
0.003
10 μ
100 μ
rth – tw
Single pulse
PDM
t
T
Duty = t/T
Rth (ch-c) = 2.78°C/W
1m
10 m
100 m
1
Pulse width tw (s)
10
Safe Operating Area
−300
−100
−50
−30
ID max (pulse)*
ID max (continuous)
−10
−5 DC operation
−3 Tc = 25°C
100 μs*
1 ms*
10 ms*
−1
−0.5
*: Single nonrepetitive
pulse Tc = 25°C
−0.3 Curves must be derated
linearly with increase in
temperature.
−0.1
−0.3 −1 −3 −10
VDSS max
−30 −100
Drain-source voltage VDS (V)
−300
EAS – Tch
1000
800
600
400
200
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = −50 V, L = 3.56 mH
Wave form
ΕAS
=
1·L·I2·
2
⎝⎛⎜⎜
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2009-09-29
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet J464.PDF ] | |
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