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What is PTVS12VU1UPA?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "300 W Transient Voltage Suppressor".


PTVS12VU1UPA Datasheet PDF - NXP Semiconductors

Part Number PTVS12VU1UPA
Description 300 W Transient Voltage Suppressor
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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PTVSxU1UPA series
300 W Transient Voltage Suppressor
Rev. 1 — 6 March 2014
Product data sheet
1. Product profile
1.1 General description
300 W unidirectional Transient Voltage Suppressor (TVS) in a DFN2020-3 (SOT1061)
leadless medium power Surface-Mounted Device (SMD) plastic package, designed for
transient overvoltage protection.
1.2 Features and benefits
Rated peak pulse power: PPPM = 300 W Reverse current: IRM = 1 nA
Reverse standoff voltage range:
Very low package height: 0.65 mm
VRWM = 7.5 V to 26 V
AEC-Q101 qualified
1.3 Applications
Power supply protection
Industrial application
Power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
PPPM
VRWM
Parameter
rated peak pulse power
reverse standoff voltage
Conditions
Min Typ Max Unit
[1][2] - - 300 W
7.5 -
26 V
[1] In accordance with IEC 61643-321 (10/1000 s current waveform).
[2] Measured from pin 1 and 2 to pin 3.
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PTVS12VU1UPA equivalent
NXP Semiconductors
PTVSxU1UPA series
300 W Transient Voltage Suppressor
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
Rth(j-sp)
thermal resistance from
junction to solder point
Min Typ Max Unit
[1] - - 240 K/W
[2] - - 120 K/W
[3] - - 65 K/W
[4] - - 10 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[4] Soldering point of cathode tab.
7. Characteristics
Table 8. Characteristics per type; PTVS7V5U1UPA to PTVS26VU1UPA
Tj = 25 C unless otherwise specified.
Type number
Reverse
standoff
voltage
VRWM (V)
Breakdown voltage
VBR (V)
IR = 1 mA
Reverse
leakage current
IRM (nA) at VRWM
Rated
peak pulse
current
IPPM (A)
[1][3]
Rated
peak pulse
current
IPPM (A)
[2][3]
Clamping
voltage
VCL (V);
at IPPM
(A)[1][3]
Max Min Typ Max Typ Max Max Max Max
PTVS7V5U1UPA 7.5
8.33 8.77 9.21 200 1000 178
23.3 19.7
PTVS10VU1UPA 10
11.10 11.70 12.30 2 50 148
17.6 23.0
PTVS12VU1UPA 12
13.30 14.00 14.70 1 50 131
15.1 25.2
PTVS15VU1UPA 15
16.70 17.60 18.50 1 50 111
12.3 28.8
PTVS18VU1UPA 18
20.00 21.00 22.10 1 50 97
10.3 32.0
PTVS26VU1UPA 26
28.90 30.40 31.90 1 50 69
7.0 43.5
Clamping
voltage
VCL (V);
at IPPM
(A)[2][3]
Max
12.9
17.0
19.9
24.4
29.2
42.1
[1] In accordance with IEC 61000-4-5 and IEC 61643-321 (8/20 s current waveform).
[2] In accordance with IEC 61643-321 (10/1000 s current waveform).
[3] Measured from pin 1 and 2 to pin 3.
PTVSXU1UPA_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 March 2014
© NXP B.V. 2014. All rights reserved.
5 of 12
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PTVS12VU1UPAThe function is 300 W Transient Voltage Suppressor. NXP SemiconductorsNXP Semiconductors

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