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Datasheet 2SC3279 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SC3279 | NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) 2SC3279
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3279
Strobe Flash Applications Medium Power Amplifier Applications
· High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A) · Low sat |  Toshiba Semiconductor | transistor |
| 2 | 2SC3279 | NPN Transistor RoHS
2SC3279
2SC3279
TRANSISTOR (NPN) TO-92
FEATURES Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERIST |  WEJ | transistor |
| 3 | 2SC3279 | NPN Silicon Epitaxial Planar Transistor ST 2SC3279
NPN Silicon Epitaxial Planar Transistor
for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Abso |  PACO | transistor |
| 4 | 2SC3279 | NPN Transistor http://www.Datasheet4U.com
http://www.Datasheet4U.com
|  ETC | transistor |
| 5 | 2SC3279 | NPN Silicon Epitaxial Transistors Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769
2SC3279
Features
• High DC Current Gain and excellent hFE Linearity hFE(1) =140-600 (V CE=1.0V, IC=0.5A) hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)
NPN Silicon Epitaxial Transistors
TO-92
A E
Pin Co |  Cnelectr | transistor |
2SC Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SC0108T2Dx-xx | Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core 2SC0108T2Dx-xx Preliminary
2SC0108T2Dx-xx Description & Application Manual
Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core
Abstract
The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica  CT-Concept transistor | | |
| 2 | 2SC0829 | Silicon NPN epitaxial planar type DataSheet.in
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
5.0±0.2
Unit: mm
4.0±0.2
• Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios
0.7±0.1
0.7±0.2 12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parame  Panasonic Semiconductor transistor | | |
| 3 | 2SC0829 | Silicon NPN epitaxial planar type DataSheet.in
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
5.0±0.2
Unit: mm
4.0±0.2
• Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios
0.7±0.1
0.7±0.2 12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parame Panasonic Semiconductor transistor | | |
| 4 | 2SC100 | NPN Transistor w
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ETC transistor | | |
| 5 | 2SC1000 | (2SCxxx) Low Level and General Purpose Amplifiers w
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 Micro Electronics transistor | | |
| 6 | 2SC1000 | Silicon NPN Epitaxial Transistor ETC transistor | | |
| 7 | 2SC1002 | Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1002
DESCRIPTION ·With TO-66 package ·High voltage ·High transition frequency APPLICATIONS ·For color TV video output applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and sym  SavantIC transistor | |
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