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PDF 2SC3279 Data sheet ( Hoja de datos )

Número de pieza 2SC3279
Descripción NPN Plastic Encapsulated Transistor
Fabricantes Secos 
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No Preview Available ! 2SC3279 Hoja de datos, Descripción, Manual

Elektronische Bauelemente
2SC3279
2A , 30V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC current gain and excellent hFE linearity.
Low saturation voltage.
CLASSIFICATION OF hFE
Product-Rank 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P
Range
140~240 200~330 300~450 420~600
TO-92
GH
J
AD
B
K
E CF
1Emitter
2Collector
3Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
30
10
6
2
0.75
150, -55~150
3
Base
1
Emitter
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter voltage
Collector Output Capacitance
Transition Frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
Cob
fT
30 - - V IC=1mA, IE=0
10 - - V IC=10mA, IB=0
6 - - V IE=1mA, IC=0
- - 0.1 µA VCB=30V, IE=0
- - 0.1 µA VEB=6V, IC=0
140 - 600
VCE=1V, IC=500mA
- - 0.82 V IC=2A, IB=100mA
- - 1.5 V VCE=1V, IC=2A
- 27 - pF VCB=10V, IE=0, f=1MHz
- 150 - MHz VCE=1V, IC=0.5A
http://www.SeCoSGmbH.com/
18-Feb-2011 Rev. B
Any changes of specification will not be informed individually.
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