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PDF MT18JSF1G72AZ Data sheet ( Hoja de datos )
| Número de pieza | MT18JSF1G72AZ | |
| Descripción | DDR3 SDRAM UDIMM | |
| Fabricantes | Micron Technology | |
| Logotipo |  |
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2GB, 4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 UDIMM
Features
DDR3 SDRAM UDIMM
MT18JSF25672AZ – 2GB
MT18JSF51272AZ – 4GB
MT18JSF1G72AZ – 8GB
Features
• DDR3 functionality and operations supported as
defined in the component data sheet
• 240-pin, unbuffered dual in-line memory module
(UDIMM)
• Fast data transfer rates: PC3-14900, PC3-12800,
PC3-10600, PC3-8500, or PC3-6400
• 2GB (256 Meg x 72), 4GB (512 Meg x 72),
8GB (1Gig x 72)
• VDD = 1.5V ±0.075V
• VDDSPD = 3.0–3.6V
• Supports ECC error detection and correction
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Dual rank
• On-board I2C temperature sensor with integrated
serial presence-detect (SPD) EEPROM
• 8 internal device banks
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Gold edge contacts
• Halogen-free
• Fly-by topology
• Terminated control, command, and address bus
Figure 1: 240-Pin UDIMM (MO-269 R/C E3)
Module height: 30.0mm (1.181in)
Options
• Operating temperature
– Commercial (0°C ≤ TA ≤ +70°C)
• Package
– 240-pin DIMM (halogen-free)
• Frequency/CAS latency
– 1.07ns @ CL = 13 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.87ns @ CL = 7 (DDR3-1066)
Marking
None
Z
-1G9
-1G6
-1G4
-1G1
Table 1: Key Timing Parameters
Speed Industry
Grade Nomenclature
-1G9
PC3-14900
-1G6
PC3-12800
-1G4
PC3-10600
-1G1
PC3-8500
-1G0
PC3-8500
-80B
PC3-6400
CL =
13
1866
–
–
–
–
–
CL =
11
1600
1600
–
–
–
–
Data Rate (MT/s)
CL =
10 CL = 9 CL = 8 CL = 7
1333 1333 1066 1066
1333 1333 1066 1066
1333 1333 1066 1066
– – 1066 1066
– – 1066 –
––––
CL = 6
800
800
800
800
800
800
CL = 5
667
667
667
667
667
667
tRCD
(ns)
13.125
13.125
13.125
13.125
15
15
tRP
(ns)
13.125
13.125
13.125
13.125
15
15
tRC
(ns)
47.125
48.125
49.125
50.625
52.5
52.5
PDF: 09005aef83606b46
jsf18c256_512_1gx72az.pdf - Rev. H 10/12 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
http://www.Datasheet4U.com
1 page  
2GB, 4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 UDIMM
Pin Descriptions
Table 7: Pin Descriptions (Continued)
Symbol
SDA
TDQSx,
TDQSx#
Err_Out#
EVENT#
VDD
VDDSPD
VREFCA
VREFDQ
VSS
VTT
NC
NF
Type
I/O
Output
Output
(open drain)
Output
(open drain)
Supply
Supply
Supply
Supply
Supply
Supply
–
–
Description
Serial data: Used to transfer addresses and data into and out of the temperature sen-
sor/SPD EEPROM on the I2C bus.
Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are
no function.
Parity error output: Parity error found on the command and address bus.
Temperature event:The EVENT# pin is asserted by the temperature sensor when criti-
cal temperature thresholds have been exceeded.
Power supply: 1.5V ±0.075V. The component VDD and VDDQ are connected to the
module VDD.
Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.
Reference voltage: Control, command, and address VDD/2.
Reference voltage: DQ, DM VDD/2.
Ground.
Termination voltage: Used for control, command, and address VDD/2.
No connect: These pins are not connected on the module.
No function: These pins are connected within the module, but provide no functional-
ity.
PDF: 09005aef83606b46
jsf18c256_512_1gx72az.pdf - Rev. H 10/12 EN
5 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
http://www.Datasheet4U.com
5 Page 
2GB, 4GB, 8GB (x72, ECC, DR) 240-Pin DDR3 UDIMM
DRAM Operating Conditions
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 11: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade
Component Speed Grade
-2G1
-093
-1G9
-107
-1G6
-125
-1G4
-15E
-1G1
-187E
-1G0
-187
-80C
-25E
-80B
-25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
PDF: 09005aef83606b46
jsf18c256_512_1gx72az.pdf - Rev. H 10/12 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
http://www.Datasheet4U.com
11 Page | ||
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