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PDF Si7905DN Data sheet ( Hoja de datos )
| Número de pieza | Si7905DN | |
| Descripción | Dual P-Channel 40 V (D-S) MOSFET | |
| Fabricantes | VISHAY | |
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Dual P-Channel 40 V (D-S) MOSFET
Si7905DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.060 at VGS = - 10 V
- 40
0.089 at VGS = - 4.5V
ID (A)
- 6e
- 5f
Qg (Typ.)
11 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 1.07 mm
Profile
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
PowerPAK 1212-8
APPLICATIONS
• Load Switch
S1
S2
3.30 mm
D1
8
D1
7
D2
6 D2
5
S1
1
G1
2
3.30 mm
S2
3 G2
4
Bottom View
Ordering Information: Si7905DN-T1-E3 (Lead (Pb)-free)
Si7905DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
G1 G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
- 40
± 20
- 6e
-5
- 5a, b
- 4a, b
- 20
- 6e
- 2a, b
- 15
11.25
20.8
13.3
2.5a, b
1.6a, b
- 55 to 150
260
V
A
mJ
W
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
f. TC = 25 °C.
Document Number: 69920
www.vishay.com
S11-2187-Rev. C, 07-Nov-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com
1 page  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
16
Si7905DN
Vishay Siliconix
12
8
Package Limited
4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
25 1.6
20
1.2
15
0.8
10
0.4
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69920
www.vishay.com
S11-2187-Rev. C, 07-Nov-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
http://www.Datasheet4U.com
5 Page 
AN822
Vishay Siliconix
105
Spreading Copper (sq. in.)
95
85
75
65
55
0%
45
100 %
50 %
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
Figure 5. Spreading Copper - Si7401DN
130
120 Spreading Copper (sq. in.)
110
100
90
80
50 %
100 %
70
60 0 %
50
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
Figure 6. Spreading Copper - Junction-to-Ambient Performance
CONCLUSIONS
As a derivative of the PowerPAK SO-8, the PowerPAK
1212-8 uses the same packaging technology and has
been shown to have the same level of thermal perfor-
mance while having a footprint that is more than 40 %
smaller than the standard TSSOP-8.
Recommended PowerPAK 1212-8 land patterns are
provided to aid in PC board layout for designs using this
new package.
The PowerPAK 1212-8 combines small size with attrac-
tive thermal characteristics. By minimizing the thermal
rise above the board temperature, PowerPAK simplifies
thermal design considerations, allows the device to run
cooler, keeps rDS(ON) low, and permits the device to
handle more current than a same- or larger-size MOS-
FET die in the standard TSSOP-8 or SO-8 packages.
www.vishay.com
4
Document Number 71681
03-Mar-06
http://www.Datasheet4U.com
11 Page | ||
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