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What is STGP20V60DF?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "600V 20A very high speed trench gate field-stop IGBT".


STGP20V60DF Datasheet PDF - STMicroelectronics

Part Number STGP20V60DF
Description 600V 20A very high speed trench gate field-stop IGBT
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STGB20V60DF, STGP20V60DF,
STGW20V60DF, STGWT20V60DF
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet - production data
TAB
TAB
3
2
1
TO-220
3
1
D²PAK
TAB
3
2
1
TO-247
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Features
Maximum junction temperature: TJ = 175 °C
Very high speed switching series
Tail-less switching off
Low saturation voltage: VCE(sat) = 1.8 V (typ.)
@ IC = 20 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode
Lead free package
Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive VCE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Order code
Table 1. Device summary
Marking
Package
Packaging
STGB20V60DF
STGP20V60DF
STGW20V60DF
STGWT20V60DF
GB20V60DF
GP20V60DF
GW20V60DF
GWT20V60DF
D²PAK
TO-220
TO-247
TO-3P
Tape and reel
Tube
Tube
Tube
June 2013
This is information on a product in full production.
DocID024360 Rev 3
1/23
www.st.com
23
http://www.Datasheet4U.com

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STGP20V60DF equivalent
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Electrical characteristics
Symbol
Table 6. IGBT switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
td(on) Turn-on delay time
tr Current rise time
(di/dt)on Turn-on current slope
td(off) Turn-off delay time
tf
(1)
Eon
(2)
Eoff
Current fall time
Turn-on switching losses
Turn-off switching losses
VCE = 400 V, IC = 20 A,
VGE = 15 V,
see Figure 28
Ets Total switching losses
td(on) Turn-on delay time
tr Current rise time
(di/dt)on Turn-on current slope
td(off) Turn-off delay time
tf
(1)
Eon
(2)
Eoff
Current fall time
Turn-on switching losses
Turn-off switching losses
VCE = 400 V, IC = 20 A,
di/dt = 1000 A/μs,
VGE = 15 V,
TJ = 175 °C, see Figure 28
Ets Total switching losses
1. Energy losses include reverse recovery of the diode.
2. Turn-off losses include also the tail of the collector current.
- 38 - ns
- 10 - ns
- 1556 - A/μs
- 149 - ns
- 15 - ns
- 200 - μJ
- 130 - μJ
- 330 - μJ
- 37 - ns
- 12 - ns
- 1340 - A/μs
- 150 - ns
- 23 - ns
- 430 - μJ
- 210 - μJ
- 640 - μJ
Symbol
Table 7. Diode switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
trr Reverse recovery time
- 40 - ns
Qrr
Irrm
dIrr/ /dt
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during tb
IF = 20 A, VR = 400 V,
VGE = 15 V, see Figure 28
di/dt = 1000 A/μs
- 320 - nC
- 16 - A
- 910 - A/μs
Err Reverse recovery energy
- 115 - μJ
trr Reverse recovery time
- 72 - ns
Qrr
Reverse recovery charge
IF = 20 A, VR = 400 V,
- 930 - nC
Irrm Reverse recovery current VGE = 15 V,
- 26 - A
TJ = 175 °C, see Figure 28
Peak rate of fall of reverse
dIrr/ /dt recovery current during tb di/dt = 1000 A/μs
- 530 - A/μs
Err Reverse recovery energy
- 307 - μJ
DocID024360 Rev 3
5/23
http://www.Datasheet4U.com


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On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STGP20V60DF electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
STGP20V60DFThe function is 600V 20A very high speed trench gate field-stop IGBT. STMicroelectronicsSTMicroelectronics

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