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PDF IRF6643TRPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF6643TRPbF | |
| Descripción | DIGITAL AUDIO MOSFET | |
| Fabricantes | IRF | |
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DIGITAL AUDIO MOSFET
IRF6643TRPbF
Features
• Latest MOSFET silicon technology
• Key parameters optimized for Class-D audio amplifier
applications
• Low RDS(on) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower
EMI
• Can deliver up to 200 W per channel into 8Ω load in half-bridge
configuration amplifier
• Dual sided cooling compatible
• Compatible with existing surface mount technologies
• RoHS compliant, halogen-free
• Lead-free (qualified up to 260°C reflow)
Applicable DirectFET Outline and Substrate Outline (see p.6, 7 for details)
Key Parameters
VDS
RDS(ON) typ. @ VGS = 10V
Qg typ.
150
29
39
RG(int) typ.
0.9
V
mΩ
nC
Ω
MZ DirectFET® ISOMETRIC
SH SJ ST SH MQ MX MT MN MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and
internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6643PbF device utilizes DirectFET® packaging technology. DirectFET® packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET® package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFET® package
also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.
These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Base part number
IRF6643TRPbF
Package Type
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF6643TRPbF
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
PD @TA = 25°C
PD @TA = 70°C
EAS
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
IAR Avalanche Current
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through are on page 9
1 www.irf.com © 2013 International Rectifier
Max.
±20
35
6.2
5.0
76
89
2.8
1.8
50
7.6
0.022
-40 to + 150
Units
V
A
W
mJ
A
W/°C
°C
May 31, 2013
http://www.Datasheet4U.com
1 page  
70
ID = 7.6A
60
TJ = 125°C
50
40
30 TJ = 25°C
20
4
6 8 10 12 14
VGS, Gate -to -Source Voltage (V)
16
Fig 12. Typical On-Resistance vs. Gate Voltage
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 15a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
45
TJ= 25°C
40
VGS = 7.0V
VGS = 8.0V
VGS = 10V
VGS = 15V
35
IRF6643TRPbF
30
25
0
10 20 30 40
ID, Drain Current (A)
50
Fig 13. Typical On-Resistance vs. Drain Current
200
ID
TOP 1.5A
160 3.0A
BOTTOM 15A
120
80
40
0
25
50 75 100 125
Starting TJ, Junction Temperature (°C)
150
Fig 14. Maximum Avalanche Energy vs. Drain Current
I AS
Fig 15b. Unclamped Inductive Waveforms
Fig 16a. Switching Time Test Circuit
5 www.irf.com © 2013 International Rectifier
Fig 16b. Switching Time Waveforms
May 31, 2013
http://www.Datasheet4U.com
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