|
|
Número de pieza | IRG4PC50F-EPBF | |
Descripción | Fast Speed IGBT | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRG4PC50F-EPBF (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! PD - 96168
IRG4PC50F-EPbF
INSULATED GATE BIPOLAR TRANSISTOR
Fast Speed IGBT
Features
Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AD package
Lead-Free
C
G
E
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
VCES = 600V
VCE(on) typ. = 1.45V
@VGE = 15V, IC = 39A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-247AD
Max.
600
70
39
280
280
± 20
20
200
78
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
Units
V
A
V
mJ
W
°C
Typ.
0.24
6 (0.21)
Max.
0.64
40
Units
°C/W
g (oz)
1
08/06/08
http://www.Datasheet4U.com
1 page IRG4PC50F-EPbF
8000
6000
VGE = 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
Cres = Cce
Coes = Cce + Cgc
SHORTED
Cies
4000
Coes
2000 Cres
0A
1 10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20 VCE = 400V
IC = 39A
16
12
8
4
0A
0 40 80 120 160 200
Qg , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.8 VCC = 480V
VGE = 15V
3.6 TJ = 25°C
IC = 39A
3.4
3.2
3.0
2.8
2.6
2.4 A
0 10 20 30 40 50 60
RG, Gate Resistance ( Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
100 RG = 5.0 Ω
VGE = 15V
VCC = 480V
10
1
IC = 78A
IC = 39A
IC = 20A
0.1 A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
http://www.Datasheet4U.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRG4PC50F-EPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRG4PC50F-EPBF | Fast Speed IGBT | International Rectifier |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |