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PDF 2N3866 Data sheet ( Hoja de datos )
| Número de pieza | 2N3866 | |
| Descripción | NPN SILICON HIGH FREQUENCY TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
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2N3866
2N3866A
NPN SILICON
HIGH FREQUENCY TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3866 and
2N3866A are Silicon NPN RF Transistors, mounted
in a hermetically sealed package, designed for high
frequency amplifier and oscillator applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Continuous Base Current
IB
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJC
55
30
3.5
0.4
2.0
5.0
-65 to +200
35
UNITS
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEO
VCE=28V
ICEV
VCE=55V, VBE(OFF)=1.5V
ICEV
VCE=30V, VBE(OFF)=1.5V, TC=200°C
IEBO
VEB=3.5V
BVCER
IC=5.0mA, RBE=10Ω
55
BVCBO
IC=500μA
55
BVCEO
IC=5.0mA
30
BVEBO
IE=100μA
3.5
VCE(SAT) IC=100mA, IB=20mA
hFE VCE=5.0V, IC=50mA (2N3866)
10
hFE VCE=5.0V, IC=50mA (2N3866A)
25
hFE VCE=5.0V, IC=360mA
5.0
fT
VCE=15V, IC=50mA, f=200MHz (2N3866)
500
fT
VCE=15V, IC=50mA, f=200MHz (2N3866A)
800
Cob VCB=28V, IE=0, f=1.0MHz
GPE
VCC=28V, Pout=1.0W, f=400MHz (Figure 1)
η VCC=28V, Pout=1.0W, f=400MHz (Figure 1)
MAX
20
0.1
5.0
0.1
1.0
200
200
3.0
10
45
UNITS
μA
mA
mA
mA
V
V
V
V
V
MHz
MHz
pF
dB
%
R2 (15-September 2010)
http://www.Datasheet4U.com
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N3866.PDF ] | |
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