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PDF MX25V512C Data sheet ( Hoja de datos )

Número de pieza MX25V512C
Descripción 512K-BIT [x 1] 2.5V CMOS SERIAL FLASH
Fabricantes MACRONIX 
Logotipo MACRONIX Logotipo



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MX25V512C
512K-BIT [x 1] 2.5V CMOS SERIAL FLASH
FEATURES
GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• 524,288 x 1 bit structure
• 16 Equal Sectors with 4K byte each
- Any Sector can be erased individually
• Single Power Supply Operation
- 2.35 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
• High Performance
- Fast access time: 50MHz serial clock
- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)
- Fast erase time: 60ms(typ.)/sector (4K-byte per sector) ; 1s(typ.) and 2s(max.)/chip(512Kb)
• Low Power Consumption
- Low active read current: 8mA(max.) at 50MHz and 4mA(max.) at 25MHz
- Low active programming current: 15mA (max.)
- Low active erase current: 15mA (max.)
- Low standby current: 10uA (max.)
- Deep power-down mode 1uA (typical)
• Minimum 100,000 erase/program cycles
• 20 years of data retention
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Block Lock protection
- The BP0~BP1 status bit defines the size of the area to be software protected against Program and Erase in-
structions.
• Auto Erase and Auto Program Algorithm
- Automatically erases and verifies data at selected sector
- Automatically programs and verifies data at selected page by an internal algorithm that automatically times the
program pulse widths (Any page to be programed should have page in the erased state first).
Status Register Feature
Electronic Identification
- JEDEC 2-byte Device ID
- RES command, 1-byte Device ID
P/N: PM1470
REV. 1.2, JAN. 04, 2011
1
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MX25V512C pdf
MX25V512C
Figures
8-LAND USON (2x3mm)..................................................................................................................................... 8
8-PIN TSSOP (173mil)........................................................................................................................................ 8
Figure 1. Hold Condition Operation ................................................................................................................. 11
Figure 2. Serial Modes Supported.................................................................................................................... 13
Figure 3.Maximum Negative Overshoot Waveform.......................................................................................... 22
Figure 4. Maximum Positive Overshoot Waveform........................................................................................... 22
Figure 5. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL............................................................ 23
Figure 6. OUTPUT LOADING.......................................................................................................................... 23
Figure 7. Serial Input Timing............................................................................................................................. 27
Figure 8. Output Timing.................................................................................................................................... 27
Figure 9. Hold Timing........................................................................................................................................ 28
Figure 10. WP# Disable Setup and Hold Timing during WRSR when SRWD=1.............................................. 28
Figure 11. Write Enable (WREN) Sequence (Command 06)............................................................................ 29
Figure 12. Write Disable (WRDI) Sequence (Command 04)............................................................................ 29
Figure 13. Read Identification (RDID) Sequence (Command 9F).................................................................... 29
Figure 14. Read Status Register (RDSR) Sequence (Command 05)............................................................... 30
Figure 15. Write Status Register (WRSR) Sequence (Command 01)............................................................. 30
Figure 16. Read Data Bytes (READ) Sequence (Command 03)..................................................................... 30
Figure 17. Read at Higher Speed (FAST_READ) Sequence (Command 0B)................................................. 31
Figure 18. Page Program (PP) Sequence (Command 02).............................................................................. 32
Figure 19. Sector Erase (SE) Sequence (Command 20)................................................................................. 33
Figure 20. Block Erase (BE) Sequence (Command 52 or D8)........................................................................ 33
Figure 21. Chip Erase (CE) Sequence (Command 60 or C7).......................................................................... 34
Figure 22. Deep Power-down (DP) Sequence (Command B9)....................................................................... 34
Figure 23. Release from Deep Power-down and Read Electronic Signature (RES) Sequence (Command AB).
.......................................................................................................................................................................... 34
Figure 24. Release from Deep Power-down (RDP) Sequence (Command AB).............................................. 35
Figure 25. Read Electronic Manufacturer & Device ID (REMS) Sequence (Command 90)............................ 35
Figure 26. Power-up Timing.............................................................................................................................. 36
Figure 27. AC Timing at Device Power-Up....................................................................................................... 37
Figure 28. Power-Down Sequence................................................................................................................... 38
8-land USON (2x3 mm, 0.6mm package height).............................................................................................. 42
8-pin TSSOP (173mil)....................................................................................................................................... 43
P/N: PM1470
REV. 1.2, JAN. 04, 2011
5
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MX25V512C arduino
MX25V512C
Table 2. COMMAND DEFINITION
COMMAND WREN (write WRDI (write
(byte)
enable)
disable)
1st
2nd
3rd
4th
5th
Action
06 (hex)
04 (hex)
sets the (WEL) resets the
write enable (WEL) write
latch bit enable latch
bit
RDID (read
identification)
9F (hex)
outputs
manufacturer
ID and 2-byte
device ID
RDSR (read WRSR
status (write status
register)
register)
READ
(read data)
Fast Read
(fast read
data)
05 (hex)
01 (hex)
03 (hex) 0B (hex)
AD1 AD1
AD2 AD2
AD3 AD3
x
to read out to write new n bytes read n bytes
the status values to the out until CS# read out
register status register goes high until CS#
goes high
COMMAND SE(Sector
(byte)
Erase)
BE
(Block
Erase)
(2)
CE (Chip
Erase)
PP(Page
Program)
DP(Deep
Power
Down)
RDP
(Release
from Deep
Power-
down)
RES (Read
Electronic
ID)
REMS (Read
Electronic
Manufacturer
& Device ID)
1st
2nd
3rd
4th
5th
Action
20 (hex)
AD1
AD2
AD3
52 or D8
(hex)
AD1
AD2
AD3
60 or C7
(hex)
02 (hex)
AD1
AD2
AD3
B9 (hex)
AB (hex)
AB (hex)
x
x
x
90 (hex)
x
x
ADD(1)
to erase the to erase the to erase the to program
selected selected whole chip the selected
sector
block
page
enters
deep
power
down
mode
release to read
from deep out 1-byte
power down Device ID
mode
Output the
manufacturer
ID and device
ID
(1) ADD=00H will output the manufacturer's ID first and ADD=01H will output device ID first.
(2) BE command may erase whole 512Kb chip.
(3) It is not recommended to adopt any other code which is not in the above command definition table.
P/N: PM1470
11
REV. 1.2, JAN. 04, 2011
http://www.Datasheet4U.com

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