IRF1010 Datasheet PDF - nELL
Part Number | IRF1010 | |
Description | N-Channel Power MOSFET / Transistor | |
Manufacturers | nELL | |
Logo | ||
There is a preview and IRF1010 download ( pdf file ) link at the bottom of this page. Total 7 Pages |
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IRF1010 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(84A, 60Volts)
The Nell IRF1010 is a three-terminal silicon
device with current conduction capability
of 84A, fast switching speed, low on-state
resistance, breakdown voltage rating of 60V,
and max. threshold voltage of 4 volts.
They are designed as an extremely efficient
and reliable device for use in a wide variety of
applications. These transistors can be operated
directly from integrated circuits.
FEATURES
RDS(ON) = 8.5mΩ @ VGS = 10V
Ultra low gate charge(86nC max.)
Low reverse transfer capacitance
(CRSS = 200pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
175°C operation temperature
D
GDS
TO-220AB
(IRF1010A)
D
G
D
S
TO-263(D2PAK)
(IRF1010H)
D (Drain)
PRODUCT SUMMARY
ID (A)
ID (A), Package Limited
VDSS (V)
RDS(ON) (mΩ)
QG(nC) max.
84
75
60
8.5 @ VGS = 10V
86
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VALUE
UNIT
VDSS
VDGR
VGS
Drain to Source voltage
Drain to Gate voltage
Gate to Source voltage
TJ=25°C to 150°C
RGS=20KΩ
60
60 V
±20
ID Continuous Drain Current (Note 1)
IDM Pulsed Drain current(Note 2)
VGS=10V, TC=25°C
VGS=10V, TC=100°C
84
60
A
340
IAR
EAR
EAS
dv/dt
Avalanche current(Note 2)
Repetitive avalanche energy(Note 2)
Single pulse avalanche energy(Note 3)
Peak diode recovery dv/dt(Note 4)
See fig.12,16,17
L=0.077mH, IAS=51A
51
mJ
99
5 V /ns
Total power dissipation
PD
Derating factor above 25°C
TC=25°C
140
0.90
W
W /°C
TJ Operation junction temperature
-55 to 175
TSTG
Storage temperature
-55 to 175
ºC
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
300
Mounting torque, #6-32 or M3 screw
10 (1.1)
Note: 1.Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
2.Repetitive rating: pulse width limited by junction temperature.
3.L=0.077mH, IAS≤51A, RG=25Ω, starting TJ=25˚C
4.ISD ≤ 51A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
www.nellsemi.com
Page 1 of 7
lbf.in (N.m)
|
|
SEMICONDUCTOR
10
IRF1010 Series RRooHHSS
Nell High Power Products
Fig.10 Maximum effective transient thermal lmpedance,
Junction-to-Case
1
0.1
0.01
0.001
10-6
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
(Thermal response)
10-5
0.0001
τJ
τ1
R1
τCi = i/Ri
R2
τ2
Ri (°C/W)
τi (sec)
τC 0.415 0.000246
0.410 0.000898
0.285 0.000954
Notes:
1. Duty factor, D = t1/ t2
2. Peak Tj = PDM * Rth(j-c) +TC
0.001
0.01
0.1
Rectangular Pulse Duration, t1 (sec)
Fig.11a. Switching time test circuit
Fig.11b. Switching time waveforms
VDS
VGS
RG
RD
D.U.T.
10V
Pulse width ≤ 1µs
Duty Factor ≤ 0.1%
+
- VDD
VDS
90%
10%
VGS
td(ON)
tR
td(OFF)
tF
Fig.12a. Unclamped lnductive test circuit
Fig.12b. Unclamped lnductive waveforms
VDS
L
RG
20V
tP
D.U.T.
lAS
0.01Ω
15V
DRIVER
BVDSS
lAS
+
- VDD
A
VDD
lD(t)
tp
VDS(t)
Time
www.nellsemi.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF1010 electronic component. |
Information | Total 7 Pages | |
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