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PDF 4N60B Data sheet ( Hoja de datos )
| Número de pieza | 4N60B | |
| Descripción | N-Chanel Power MOSFET | |
| Fabricantes | angstrem | |
| Logotipo |  |
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N-Chanel Power MOSFET
ANA4N60B, ANP4N60B, ANB4N60B,
AND4N60B, ANI4N60B, ANU4N60B
Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC
Applications
SMPS
PFC
Features
Low Qg
Low Rdson
RoHS compliant
1
Gate
2
Drain
3
Source
Table 1. Device summary
Part numbers
Marking
Package
ANA4N60B
A4N60B
TO-220FP
ANP4N60B
P4N60B
TO-220
ANB4N60B
B4N60B
D²PAK
AND4N60B
ANI4N60B
D4N60B
I4N60B
DPAK
I2PAK
ANU4N60B
U4N60B
Table 2. Absolute Maximum Ratings
Symbol
Parameter
TO-220FP
TO-220
IPAK
Value
D²PAK
I2PAK
ID
ID
IDM(1)
VGS
PD
Tstg
Drain current (continuous),
VGS= at TC = 25°C
Drain current (continuous),
VGS= at TC = 100°C
Drain current (pulsed) at
TC = 25°C
Gate-source voltage
Maximum Power
Dissipation at TC = 25°C
Maximum Power
Dissipation at TC = 100°C
Storage temperature
25
4
2,5
16
±20
70
―
-55 … +150
Tj
Operating junction
temperature
TL
Soldering Temperature, for
10 sec.
Mounting Torque, 6-32 or
M3 Screw
Table 3. Thermal resistance
Symbol
Parameter
1,13
TO-220FP
TO-220
-55 … +150
260
―
Value
D²PAK
I2PAK
Rthj-case
Rthj-amb
Thermal resistance
junction-case max
Thermal resistance
junction-ambient max
5
1,78
62,5
Packaging
Tube
Tube
Tape and reel
Tape and reel
Tube
Tube
DPAK
IPAK
Units
A
A
A
V
W
W
°C
N·m
DPAK
IPAK
100
Value
°C/W
°C/W
1
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N-Chanel Power MOSFET
5
Free Datasheet http://www.Datasheet4U.com
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N-Chanel Power MOSFET
IPAK
Proezd № 4806, Bld 4/3, Zelenograd, Moscow, Russia, 124460
Tel: +7(499)731-4906; +7(499)731-3270; Fax: +7(400)731-1508
E-mail: [email protected]; Web: www.angstrem.ru
11
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11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet 4N60B.PDF ] | |
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