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PDF HS817BG Data sheet ( Hoja de datos )
| Número de pieza | HS817BG | |
| Descripción | Optocoupler | |
| Fabricantes | Vishay | |
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HS817, HS817G, HS817B, HS817BG
Vishay Semiconductors
Optocoupler with Transistor Output
CE
43
17197_7
1
A
2
C
17197_4
DESCRIPTION
The HS817 series consists of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a
4-lead plastic dual inline package.
AGENCY APPROVALS
• BSI: EN 60065, EN 60950-1:2006
• FIMKO
• UL file no. E52744
• cUL tested to CSA 22.2 bulletin 5A
FEATURES
• Rated impulse voltage (transient overvoltage)
VIOTM = 6 kVpeak
• Isolation test voltage (partial discharge test
voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive)
VIORM = 850 Vpeak
• Creepage current resistance according to IEC 112,
comparative tracking index: CTI 250
• Thickness through insulation 0.4 mm
• Isolation materials according to UL 94 V-O
• Pollution degree 2 (resp. IEC 664)
• Climatic classification 55/100/21 (IEC 68 part 1)
• Low temperature coefficient of CTR
• G = leadform 10.16 mm; provides creepage distance
> 8 mm, suffix letter “G” is not marked on the optocoupler
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
ORDERING INFORMATION
HS8 1 7 x x
PART NUMBER
CTR
BIN
PACKAGE
OPTION
AGENCY CERTIFIED/PACKAGE
UL, cUL, BSI, FIMKO
100 to 300
DIP-4
HS817
DIP-4, 400 mil
HS817G
Notes
• G = leadform 10.16 mm; G is not marked on the body.
• For additional information on the available options refer to option information.
CTR (%)
DIP-#
DIP-#, 400 mil
7.62 mm
10.16 mm
130 to 260
HS817B
HS817BG
Rev. 1.2, 27-Jul-11
1 Document Number: 83548
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.Datasheet4U.com
1 page  
www.vishay.com
HS817, HS817G, HS817B, HS817BG
Vishay Semiconductors
IF
0
IC
100 %
90 %
tp
t
10 %
0
tp
td
tr
ton (= td + tr)
tr
td
t on
Pulse duration
Delay time
Rise time
Turn-on time
ts tf
t off
ts
tf
toff (= ts + tf)
Fig. 5 - Switching Times
t
Storage time
Fall time
Turn-off time
96 11698
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.6
1.5 Tamb = 0 °C
1.4
Tamb = - 40 °C
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.1
Tamb = 25 °C
Tamb = 50 °C
Tamb = 75 °C
Tamb = 100 °C
1 10 100
IF - Forward Current (mA)
Fig. 6 - Forward Voltage vs. Forward Current
10 000
1000
100
10
1
IF = 0 mA
VCE = 40 V
VCE = 24 V
VCE = 12 V
0.1
0.01
0.001
- 40 - 20 0
20 40 60 80 100
Tamb - Ambient Temperature (°C)
Fig. 8 - Leakage Current vs. Ambient Temperature
50
45 IF = 30 mA
40
35 IF = 20 mA
30 IF = 15 mA
25
20 IF = 10 mA
15
10
5 IF = 5 mA
0
012345678
VCE - Collector Emitter Voltage (NS) (V)
Fig. 7 - Collector Current vs. Collector Emitter Voltage (NS)
30
25
IF = 25 mA
20
15 IF = 10 mA
10
IF = 5 mA
5
IF = 1 mA
IF = 2 mA
0
0 0.1 0.2 0.3 0.4
VCE - Collector Emitter Voltage (sat) (V)
Fig. 9 - Collector Current vs. Collector Emitter Voltage (sat)
Rev. 1.2, 27-Jul-11
5 Document Number: 83548
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HS817BG.PDF ] | |
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