K6R4016C1D Datasheet PDF - Samsung
| Part Number | K6R4016C1D | |
| Description | CMOS SRAM | |
| Manufacturers | Samsung | |
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There is a preview and K6R4016C1D download ( pdf file ) link at the bottom of this page. Total 12 Pages | ||
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PRELIMPreliminaryPPPPPPPPPINARY
K6R4016C1D
CMOS SRAM
Document Title
256Kx16 Bit High Speed Static RAM(5.0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev No. History
Draft Data
Remark
Rev. 0.0 Initial release with Preliminary.
September. 7. 2001 Preliminary
Rev. 0.1 Package dimension modify on page 11.
Septermber.28. 2001 Preliminary
Rev. 0.2
Change Icc, Isb and Isb1
Item
10ns
ICC(Commercial)
12ns
15ns
10ns
ICC(Industrial)
12ns
15ns
ISB
ISB1(Normal)
Previous
90mA
80mA
70mA
115mA
100mA
85mA
30mA
10mA
Current
65mA
55mA
45mA
85mA
75mA
65mA
20mA
5mA
November, 3, 2001
Preliminary
Rev. 0.3
Rev. 0.4
Rev. 1.0
Rev. 2.0
1. Correct AC parameters : Read & Write Cycle
2. Corrrect Power part : Delete "P-Industrial,Low Power" part
3. Delete Data Retention Characteristics
1. Delete 15ns speed bin.
2. Change Icc for Industrial mode.
Item
ICC(Industrial)
10ns
12ns
Previous
85mA
75mA
Current
75mA
65mA
1. Final datasheet release.
2. Delete 12ns speed bin.
1. Add the Lead Free Package type.
November, 23, 2001 Preliminary
December, 18, 2001 Preliminary
July, 09, 2002
June. 20, 2003
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.0
June 2003
Free Datasheet http://www.Datasheet4U.com
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K6R4016C1D
PRELIMPreliminaryPPPPPPPPPINARY
CMOS SRAM
RECOMMENDED DC OPERATING CONDITIONS* (TA=0 to 70°C)
Parameter
Symbol
Min
Typ
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
VCC
VSS
VIH
VIL
4.5
0
2.2
-0.5**
5.0
0
-
-
* The above parameters are also guaranteed at industrial temperature range.
** VIL(Min) = -2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA.
*** VIH(Max) = V CC + 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA.
Max
5.5
0
VCC+0.5***
0.8
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Symbol
ILI
ILO
ICC
ISB
ISB1
VOL
VOH
Test Conditions
VIN=VSS to VCC
CS = VIH or O E=VIH or WE=V IL
VOUT=VSS to VCC
Min. Cycle, 100% Duty
CS = VIL, VIN=V I H or VIL, IOUT=0mA
Com.
Ind.
Min. Cycle, CS=V I H
f=0MHz, CS ≥V CC-0.2V,
VIN≥VCC-0.2V or VIN≤0.2V
IOL = 8 m A
IOH=-4mA
10ns
10ns
Min Max Unit
-2 2 µA
-2 2 µA
- 65 mA
- 75
- 20 mA
-5
- 0.4
2.4 -
V
V
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA=25°C, f=1.0MHz)
Item
Symbol
Input/Output Capacitance
CI/O
Input Capacitance
CIN
* Capacitance is sampled and not 100% tested.
Test Conditions
VI/O=0V
VIN=0V
TYP
-
-
Max
8
6
Unit
pF
pF
-5-
Rev 2.0
June 2003
Free Datasheet http://www.Datasheet4U.com
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