STB26NM60N Datasheet PDF - STMicroelectronics
| Part Number | STB26NM60N | |
| Description | N-channel Power MOSFET | |
| Manufacturers | STMicroelectronics | |
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STB26NM60N, STF26NM60, STI26NM60N,
STP26NM60N, STW26NM60N
N-channel 600 V, 0.135 Ω, 20 A MDmesh™ II Power MOSFET
in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
Datasheet — production data
Features
TAB
TAB
Type
STB26NM60N
STF26NM60N
STI26NM60N
STP26NM60N
STW26NM60N
VDSS
600 V
600 V
600 V
600 V
600 V
RDS(on)
max
< 0.165 Ω
< 0.165 Ω
< 0.165 Ω
< 0.165 Ω
< 0.165 Ω
ID
20 A
20 A
20 A
20 A
20 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
3
2
1
TO-220FP
TAB
123
I²PAK
3
2
1
TO-220
3
1
D²PAK
3
2
1
TO-247
Application
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET applies a new vertical structure to the
company’s strip layout to yield a device with one
of the world’s lowest on-resistance and gate
charge, making it suitable for the most demanding
high-efficiency converters.
Figure 1. Internal schematic diagram
$4!"
'
3
3#
Table 1. Device summary
Order codes
STB26NM60N
STF26NM60N
STI26NM60N
STP26NM60N
STW26NM60N
Marking
26NM60N
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
March 2012
This is information on a product in full production.
Doc ID 15642 Rev 4
1/23
www.st.com
23
Free Datasheet http://www.Datasheet4U.com
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STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Electrical characteristics
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
ID = 1 mA, VGS = 0
VDS = 600 V
VDS = 600 V, TC = 125 °C
VGS = ± 25 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 10 A
Min. Typ. Max. Unit
600 V
1 µA
100 µA
±0.1 µA
23 4V
0.135 0.165 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Coss eq. (1)
Equivalent output
capacitance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
Rg Gate input resistance
VDS = 50 V, f = 1 MHz,
VGS = 0
VGS = 0, VDS = 0 to 480 V
VDD = 480 V, ID = 20 A,
VGS = 10 V,
(see Figure 19)
f=1 MHz Gate DC Bias=0
Test signal level = 20 mV
open drain
1800
- 115 -
1.1
pF
pF
pF
- 310 - pF
60 nC
- 8.5 - nC
30 nC
- 2.8 - Ω
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 10 A
RG = 4.7 Ω VGS = 10 V
(see Figure 18)
Min. Typ. Max. Unit
13 ns
25 ns
--
85 ns
50 ns
Doc ID 15642 Rev 4
5/23
Free Datasheet http://www.Datasheet4U.com
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STB26NM60N electronic component. |
| Information | Total 23 Pages | |
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