DataSheet39.com

What is STW26NM60N?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N-channel Power MOSFET".


STW26NM60N Datasheet PDF - STMicroelectronics

Part Number STW26NM60N
Description N-channel Power MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


There is a preview and STW26NM60N download ( pdf file ) link at the bottom of this page.





Total 13 Pages



Preview 1 page

No Preview Available ! STW26NM60N datasheet, circuit

STW26NM60N
N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFETs
in a TO-247 package
Datasheet - production data
Features
3
2
1
TO-247
Order code
STW26NM60N
VDS
600 V
RDS(on) max
0.165 Ω
ID
20 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
Switching applications
Figure 1. Internal schematic diagram
' 
* 
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
6 
6&
Order code
STW26NM60N
Table 1. Device summary
Marking
Packages
26NM60N
TO-247
Packaging
Tube
September 2013
This is information on a product in full production.
DocID025246 Rev 1
1/13
www.st.com

line_dark_gray
STW26NM60N equivalent
STW26NM60N
Electrical characteristics
Symbol
Table 7. Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 10 A
RG = 4.7 Ω VGS = 10 V
(see Figure 14)
Min. Typ. Max. Unit
- 13 - ns
- 25 - ns
- 85 - ns
- 50 - ns
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max Unit
ISD Source-drain current
- 20 A
(1)
ISDM Source-drain current (pulsed)
- 80 A
(2)
VSD Forward on voltage
ISD = 20 A, VGS = 0 - 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
- 370
ISD = 20 A, di/dt = 100 A/μs
VDD = 60 V
(see Figure 16)
- 5.8
- 31.6
ns
μC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
- 450
ISD = 20 A, di/dt = 100 A/μs
VDD = 60 V, Tj = 150 °C
(see Figure 16)
- 7.5
- 32.5
ns
μC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
DocID025246 Rev 1
5/13
13


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STW26NM60N electronic component.


Information Total 13 Pages
Link URL [ Copy URL to Clipboard ]
Download [ STW26NM60N.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionManufacturers
STW26NM60The function is N-CHANNEL Power MOSFET.ST Microelectronics
ST Microelectronics
STW26NM60-HThe function is Power MOSFETs.STMicroelectronics
STMicroelectronics
STW26NM60NThe function is N-channel Power MOSFET.STMicroelectronics
STMicroelectronics

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

STW2     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search