7NK80Z Datasheet PDF - STMicroelectronics
| Part Number | 7NK80Z | |
| Description | STP7NK80Z | |
| Manufacturers | STMicroelectronics | |
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STP7NK80Z - STP7NK80ZFP
STB7NK80Z - STB7NK80Z-1
N-channel 800V - 1.5Ω - 5.2A - TO-220/TO-220FP/D2PAK/I2PAK
Zener-protected SuperMESH™ Power MOSFET
General features
Type
STP7NK80Z
STP7NK80ZFP
STB7NK80Z
STB7NK80Z-1
VDSS
(@Tjmax)
800V
800V
800V
800V
RDS(on)
< 1.8Ω
< 1.8Ω
< 1.8Ω
< 1.8Ω
ID
5.2A
5.2A
5.2A
5.2A
■ Extremely high dv/dt capability
■ 100% avalange tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
Applications
■ Switching application
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
Internal schematic diagram
Order codes
Part number
STP7NK80Z
STP7NK80ZFP
STB7NK80ZT4
STB7NK80Z-1
Marking
P7NK80Z
P7NK80ZFP
B7NK80Z
B7NK80Z-1
Package
TO-220
TO-220FP
D²PAK
I²PAK
Packaging
Tube
Tube
Tape e reel
Tube
October 2006
Rev 5
1/18
www.st.com
18
Free Datasheet http://www.Datasheet4U.com
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STP7NK80Z - STP7NK80ZFP - STB7NK80Z - STB7NK80Z-1
2 Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
Breakdown voltage
IDSS
Zero gate voltage
Drain Current (VGS = 0)
IGSS
Gate-body leakage
Current (VDS = 0)
VGS(th) Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID =1MA, VGS = 0
800
VDS = Max rating
VDS = Max rating, TC = 125°C
V
1 µA
50 µA
VGS = ± 20 V
VDS = VGS, ID = 100 µA
VGS = 10 V, ID = 2.6 A
± 10 µA
3 3.75 4.5
1.5 1.8
V
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS = 15v, ID = 2.6 A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
Coss eq. Equivalent output
(2) capacitance
VDS =0V, VDS = 0V to 640V
5
1138
122
25
50
S
pF
pF
pF
pF
td(on)
tr
tr(off)
tr
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 400 V, ID = 2.6 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16)
20 ns
12 ns
45 ns
20 ns
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 640 V, ID = 5.2 A,
VGS = 10 V
(see Figure 17)
40 56 nC
7 nC
21 nC
tr(Voff)
tr
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 640 V, ID = 5.2 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16)
12 ns
10 ns
20 ns
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
5/18
Free Datasheet http://www.Datasheet4U.com
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| Information | Total 16 Pages | |
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