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What is FTP11N08?

This electronic component, produced by the manufacturer "IPS", performs the same function as "N-Channel MOSFET".


FTP11N08 Datasheet PDF - IPS

Part Number FTP11N08
Description N-Channel MOSFET
Manufacturers IPS　
Logo IPS Logo　


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FTP11N08
N-Channel MOSFET
Applications:
• Automotive
• DC Motor Control
• Class D Amplifier
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTP11N08
PACKAGE
TO-220
BRAND
FTP11N08
Pb Lead Free Package and Finish
VDSS
75V
RDS(ON) (Max.)
11 mΩ
ID
100A
D
G
DS
TO-220
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=10 mH, ID=11 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
FTP06N65
75
100*
Figure 3
Figure 6
230
1.54
± 20
600
Figure 8
3.0
300
260
-55 to 175
Units
V
A
W
W/ oC
V
mJ
V/ ns
oC
*Drain Current limited by Maximum Package Current Rating, 75 Amps
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
©2007 InPower Semiconductor Co., Ltd.
Min. Typ. Max.
-- -- 0.65
-- -- 62
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +175 oC.
1 cubic foot chamber, free air.
FTP11N08 REV. B June 2007
Free Datasheet http://www.Datasheet4U.com

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FTP11N08 equivalent
Figure 6. Maximum Peak Current Capability
1000
TRANSCONDUCTANCE
100 MAY LIMIT CURRENT IN
THIS REGION
10
VGS = 10V
1
10E-6
100E-6
1E-3
10E-3
tp, Pulse Width (s)
100E-3
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1---5----0----–----T----C---
125
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
120
PULSE DURATION = 10 µs
DUTY CYCLE = 0.5% MAX
100 TC=25°C
80
60
40
20
0
3.0
+175 oC
+25 oC
-55 oC
4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Figure 8. Unclamped Inductive Switching
Capability
1000
100
STARTING TJ = 25 oC
STARTING TJ = 150 oC
10
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If R≠ 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
R equals total Series resistance of Drain circuit
1
1E-6
10E-6
100E-6
1E-3
tAV, Time in Avalanche (s)
10E-3
0.018
0.016
Figure 9. Typical Drain-to-Source ON
Resistance vs Drain Current
PULSE DURATION = 10 µs
DUTY CYCLE = 0.5% MAX
TC=25°C
0.014
0.012
0.010
VGS = 10V
0.008
0
25 50 75 100 125 150
ID, Drain Current (A)
©2007 InPower Semiconductor Co., Ltd.
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
2.00
1.75
1.50
1.25
1.00
0.75
0.50
-75 -50 -25 0
PULSE DURATION = 10 µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 50A
25 50 75 100 125 150 175
TJ, Junction Temperature (oC)
FTP11N08 REV. B June 2007
Page 5 of 11
Free Datasheet http://www.Datasheet4U.com


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1. - 75V, 100A, N-Ch, MOSFET

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