29LV512 Datasheet PDF - ATMEL Corporation
Part Number | 29LV512 | |
Description | AT29LV512 | |
Manufacturers | ATMEL Corporation | |
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Features
• Single Supply Voltage, Range 3V to 3.6V
• 3-volt Only Read and Write Operation
• Software Protected Programming
• Low-power Dissipation
– 15 mA Active Current
– 50 µA CMOS Standby Current
• Fast Read Access Time – 120 ns
• Sector Program Operation
– Single-cycle Reprogram (Erase and Program)
– 512 Sectors (128 Bytes/Sector)
– Internal Address and Data Latches for 128 Bytes
• Fast Sector Program Cycle Time – 20 ms Max
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance > 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
• Green (Pb/Halide-free) Packaging Option
512K (64K x 8)
3-volt Only
Flash Memory
AT29LV512
1. Description
The AT29LV512 is a 3-volt-only in-system Flash programmable erasable read-only
memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man-
ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 120 ns with power dissipation of just 54 mW over the industrial tem-
perature range. When the device is deselected, the CMOS standby current is less
than 50 µA. The device endurance is such that any sector can typically be written to in
excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29LV512 does not require
high input voltages for programming. Three-volt-only commands determine the opera-
tion of the device. Reading data out of the device is similar to reading from an
EPROM. Reprogramming the AT29LV512 is performed on a sector basis; 128 bytes
of data are loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 128 bytes of data are captured at
microprocessor speed and internally latched, freeing the address and data bus for
other operations. Following the initiation of a program cycle, the device will automati-
cally erase the sector and then program the latched data using an internal control
timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the
end of a program cycle has been detected, a new access for a read or program can
begin.
0177O–FLASH–9/08
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![]() ![]() AT29LV512
4.7 Toggle Bit
In addition to DATA polling, the AT29LV512 provides another method for determining the end of
a program or erase cycle. During a program or erase operation, successive attempts to read
data from the device will result in I/O6 toggling between one and zero. Once the program cycle
has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may
begin at any time during a program cycle.
4.8 Optional Chip Erase Mode
The entire device can be erased by using a 6-byte software code. Please see Software Chip
Erase application note for details.
5. Absolute Maximum Ratings*
Temperature Under Bias............................... -55° C to +125° C
Storage Temperature .................................... -65° C to +150° C
All Input Voltages (including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on A9 (including NC Pins)
with Respect to Ground ...................................-0.6V to +13.5V
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
0177O–FLASH–9/08
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 29LV512 electronic component. |
Information | Total 15 Pages | |
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