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K40T120 Datasheet PDF - Infineon

Part Number K40T120
Description IGBT
Manufacturers Infineon 
Logo Infineon Logo 

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TrenchStop® Series
IKW40T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Best in class TO247
Short circuit withstand time – 10s
Designed for :
- Frequency Converters
G
E
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
PG-TO-247-3
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW40T120 1200V 40A
1.7V
150C K40T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Package
PG-TO-247-3
Value
1200
75
40
105
105
80
40
105
20
10
270
-40...+150
-55...+150
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPV TD VLS
1
Rev. 2.3 12.03.2013
Free Datasheet http://www.Datasheet4U.com

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K40T120 equivalent
TrenchStop® Series
IKW40T120
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=150C
VCC=600V,IC=40A,
VGE=0/15V,
RG= 15,
L1)=180nH,
C1)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150C
VR=600V, IF=40A,
diF/dt=800A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
52
40
580
120
5.0
5.4
10.4
410
8.8
36
330
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
A/s
1) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPV TD VLS
5
Rev. 2.3 12.03.2013
Free Datasheet http://www.Datasheet4U.com


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K40T120 datasheet


1. 1200V, 40A, IGBT - Infineon

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