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Datasheet 2SD400 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SD400 | PNP / NPN Epitaxial Planar Silicon Transistors Ordering number : EN0199
2SB544 / 2SD400
Preliminary
SANYO Semiconductors
DATA SHEET
2SB544 / 2SD400
PNP / NPN Epitaxial Planar Silicon Transistors
Low-Frequency Power Amplifier Electronic Governor Applications
Specifications ( ) : 2SB544
Absolute Maximum Ratings at Ta=25°C
Parameter Collect |  Sanyo Semicon Device | transistor |
| 2 | 2SD400 | NPN Transistor 2SD400
TO-92MOD Transistor (NPN)
1. EMITTER 2. COLLECTOR 3. BASE
0.900 1.100 8.400 8.800
TO-92MOD
5.800 6.200
1 2 3
Features
0.400 0.600 13.800 14.200
Low-Frequency power Amp, Electronic Governor Applications
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ T |  LGE | transistor |
| 3 | 2SD400 | SILICON NPN TRANSISTOR 2SD400
TO-92MOD Transistor (NPN)
1 1. EMITTER 2 3 2. COLLECTOR
3. BASE
Features
Low-Frequency power Amp, Electronic Governor Applications
TO-92MOD
5.800 6.200
0.400 0.600
0.900 1.100
8.400 8.800
13.800 14.200
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ |  LZG | transistor |
| 4 | 2SD400 | NPN Transistor YUKUTO SEMICONDUCTOR
2SD400
FEATURES Power dissipation PCM: 900 mW (TA=25℃) TRANSISTOR (NPN)
Silicon Transistor
TO-92MOD
1. EMITTER
2. COLLECTOR 3. BASE
Collector current ICM: 1 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ |  Yukuto | transistor |
| 5 | 2SD400 | Silicon NPN transistor 2SD400(BR3DG400L)
Rev.C Feb.-2015
DATA SHEET
描述 / Descriptions TO-92LM 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92LM Plastic Package.
特征 / Features 高电压，低电流。 High Voltage ,low. Current.
用途 / Applications 用于低频功率放大及电子自� |  Blue Rocket Electronics | transistor |
2SD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SD0592A | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0592A (2SD592A)
Silicon NPN epitaxial planar type
For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features
0.7±0.2
Unit: mm
5.0±0.2 4.0±0.2
• Large collector power dissipation PC • Low collector-emitter saturation voltage V  Panasonic Semiconductor transistor | | |
| 2 | 2SD0601 | Silicon NPN epitaxial planer type Transistor
2SD601A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB709A
2.8 –0.3
+0.2
Unit: mm
s Features
q q q
0.65±0.15
+0.25 1.5 –0.05
0.65±0.15
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type pac Panasonic Semiconductor transistor | | |
| 3 | 2SD0601A | Silicon NPN epitaxial planer type Transistor Transistor
2SD0601A (2SD601A)
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB0709A (2SB709A)
I Features
G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and
a Panasonic Semiconductor transistor | | |
| 4 | 2SD0602 | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
| 5 | 2SD0602A | Silicon NPN epitaxial planer type Transistors
2SD0602A
Silicon NPN epitaxial planer type
Unit: mm
For general amplification Complementary to 2SB0710A I Features
• Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t Panasonic Semiconductor transistor | | |
| 6 | 2SD0638 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0638 (2SD638)
Silicon NPN epitaxial planar type
For medium-power general amplification Complementary to 2SB0643 (2SB643)
(0.4)
(1.5) (1.5)
Unit: mm
6.9±0.1 2.5±0.1 (1.0)
2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitt Panasonic Semiconductor transistor | | |
| 7 | 2SD0662 | Silicon NPN epitaxial planar type www.DataSheet4U.net
Transistors
2SD0662, 2SD0662B (2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
6.9±0.1 2.5±0.1 (1.0)
Unit: mm
(0.4)
(1.5)
2.0±0.2
• High collector-emitter voltage (Base open) VCEO • High transition frequency fT • Panasonic Semiconductor transistor | |
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