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Datasheet A1020 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | A1020 | Silicon PNP Epitaxial Transistor A1020 A1020 Silicon PNP Epitaxial Transistor Description: The A1020 is designed for use in power amplifier applications and power switching applications Features: ●Low collector saturation voltage ●Complementary to C2328 Chip Appearance
Chip Size Chip Thickness Bonding Pad Size Front Metal Backs |  ETC | transistor |
| 2 | A1020 | PNP Transistor, 2SA1020 2SA1020
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020
Power Amplifier Applications Power Switching Applications
• • • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SC2655 Unit: mm
|  Toshiba Semiconductor | data |
| 3 | A1020B | (A1010B / A1020B) FPGAs
ACT™ 1 Series FPGAs
Features
• 5V and 3.3V Families fully compatible with JEDEC specifications • Up to 2000 Gate Array Gates (6000 PLD equivalent gates) • Replaces up to 50 TTL Packages • Replaces up to twenty 20-Pin PAL® Packages • Design Library with over 250 Mac |  Actel Corporation | data |
| 4 | A1020B | FPGAs
v3.0
RadTolerant FPGAs
Fe a t ur es
Gener al C har act er is t ics
• 100% Resource Utilization with 100% Pin-Locking • Secure Programming Technology Prevents Reverse Engineering and Design Theft • Permanently Programmed for Operation on Power-Up • Unique In-System Diag |  Actel | data |
| 5 | A1020B-xxxx | FPGAs
v3.0
RadTolerant FPGAs
Fe a t ur es
Gener al C har act er is t ics
• 100% Resource Utilization with 100% Pin-Locking • Secure Programming Technology Prevents Reverse Engineering and Design Theft • Permanently Programmed for Operation on Power-Up • Unique In-System Diag | Actel | data |
A10 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | A10 | Processor Allwinner Technology CO., Ltd.
A10 Datasheet
V1.70 December 27, 2012
Allwinner Technology CO., Ltd.
Revision History
Version V1.00 V1.10 V1.20 V1.21 V1.30 V1.40 V1.50
V1.60
V1.70
Date 2011.08.22 2012.02.17 2012.03.29 2012.04.06 2012.08.24 2012.09.14 2012.10.18
2012.10.25
2012.12.27
Author
Desc  Allwinner Technology data | | |
| 2 | A1002 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1002
DESCRIPTION ·High Current Capability ·CollectorEmitter Breakdown Voltage
: V(BR)CEO= 120V(Min.)
APPLICATIONS ·Designed for audio and general purpose applications.  INCHANGE transistor | | |
| 3 | A1002 | PNP Transistor, 2SA1002 •crTVf
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A.
, line.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005 FAX: (973) 376-8960
2SA1002
DESCRIPTION • High Current Capability • Collector-Emitter Breakdown Voltage-
:V(BR)cEO=-120V(Min.)
APPLICATIONS • Designed f  New Jersey Semiconductor data | | |
| 4 | A1006 | PNP Transistor, 2SA1006 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1006 2SA1006A 2SA1006B
·
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2336, 2SC2336A,2SC2336B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier
PINNING P  SavantIC data | | |
| 5 | A1008 | PNP Transistor, 2SA1008 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-220 package ·Complement to type 2SC2331 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters ·High frequency power ampl SavantIC data | | |
| 6 | A1009 | PNP Transistor, 2SA1009 http://www.Datasheet4U.com
 NEC data | | |
| 7 | A100EHI | Very High Isolation DC/DC Converters A100EHI Series
Low Cost, Miniature DIP 1W, Very High Isolation DC/DC Converters
Electrical Specifications
Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice.
Key Features:
• 1W Output Power •  MicroPower Direct converter | |
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