DataSheet39.com

What is IRF6894MPBF?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "Power MOSFET ( Transistor )".


IRF6894MPBF Datasheet PDF - International Rectifier

Part Number IRF6894MPBF
Description Power MOSFET ( Transistor )
Manufacturers International Rectifier 
Logo International Rectifier Logo 


There is a preview and IRF6894MPBF download ( pdf file ) link at the bottom of this page.





Total 9 Pages



Preview 1 page

No Preview Available ! IRF6894MPBF datasheet, circuit

PD - 97633A
IRF6894MPbF
IRF6894MTRPbF
DirectFET®plus MOSFET with Schottky Diode ‚
l RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified)
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Low Package Inductance
l Optimized for High Frequency Switching 
VDSS
VGS
RDS(on)
RDS(on)
25V max ±16V max 0.9mΩ@ 10V 1.4mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
26nC 9.8nC 2.8nC 56nC 31nC 1.6V
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
l Footprint compatible to DirectFET
MX
ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6894MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6894MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6894MPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
25
±16
32
25
160
260
410
26
Units
V
A
mJ
A
4.0 14.0
3.0
ID = 33A
12.0 ID= 26A
10.0
VDS= 20V
VDS= 13V
2.0 TJ = 125°C
8.0 VDS= 5V
6.0
1.0
TJ = 25°C
0.0
2 4 6 8 10 12 14 16 18 20
4.0
2.0
0.0
0
10 20 30 40 50 60 70 80
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 1.18mH, RG = 50Ω, IAS = 26A.
1
8/12/11Free Datasheet http://www.Datasheet4U.com

line_dark_gray
IRF6894MPBF equivalent
1000
100
10
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
1
0.1 0.4 0.7 1.0
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
180
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1600
1200
800
10000
1000
IRF6894MTRPbF
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10msec
100μsec
1msec
10
1
0.1 TA = 25°C
Tj = 150°C
Single Pulse
0.01
0.01
0.1
DC
1 10
100
VDS , Drain-toSource Voltage (V)
Fig 11. Maximum Safe Operating Area
2.5
2.0 ID = 10mA
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 1.9A
2.7A
BOTTOM 26A
400
www.irf.com
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
Free Datasheet http://www.Datasheet4U.com


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF6894MPBF electronic component.


Information Total 9 Pages
Link URL [ Copy URL to Clipboard ]
Download [ IRF6894MPBF.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
IRF6894MPbFThe function is Power MOSFET ( Transistor ). InfineonInfineon
IRF6894MPBFThe function is Power MOSFET ( Transistor ). International RectifierInternational Rectifier

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

IRF6     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search