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PDF IRF6898MTRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6898MTRPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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IRF6898MPbF
IRF6898MTRPbF
HEXFET® Power MOSFET plus Schottky Diode
l RoHs Compliant Containing No Lead and Bromide
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
lDual Sided Cooling Compatible
l Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
41nC 15nC 4.7nC 66nC 43nC 1.6V
S
DG
D
S
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
MX
MP
DirectFET ISOMETRIC
Description
The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6898MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6898MPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
25
±16
35
28
213
280
473
28
Units
V
A
mJ
A
3.0
ID = 35A
2.0
TJ = 125°C
1.0
TJ = 25°C
0.0
2 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
1 www.irf.com © 2013 International Rectifier
14
12 ID= 28A
10
VDS= 20V
VDS= 13V
8
6
4
2
0
0 20 40 60 80 100 120
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.21mH, RG = 50Ω, IAS = 28A.
March 21, 2013
Free Datasheet http://www.Datasheet4U.com
1 page  
IRF6898MTRPbF
1000
100
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1msec 100μsec
10msec
10
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
1
0.1 0.4 0.7 1.0
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
10
DC
1
Ta = 25°C
Tj = 150°C
Single Pulse
0.1
0.01
0.1
1
10 100
VDS , Drain-toSource Voltage (V)
Fig 11. Maximum Safe Operating Area
225 2.5
200
175
150 2.0 ID = 10mA
125
100
75 1.5
50
25
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
2000
1800
1600
1400
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 1.7A
2.5A
BOTTOM 28A
1200
1000
800
600
400
200
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5 www.irf.com © 2013 International Rectifier
March 21, 2013
Free Datasheet http://www.Datasheet4U.com
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6898MTRPBF.PDF ] | |
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