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PDF A733 Data sheet ( Hoja de datos )
| Número de pieza | A733 | |
| Descripción | PNP Transistor ( 50V, 150A ) | |
| Fabricantes | Elite | |
| Logotipo |  |
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A733
PNP Epitaxial Silicon Transistor
LOW FREQUENCY AMPLIFIER
Collector-Emitter Voltage: VCEO=-50V
Collector Dissipation: PC(max)=250mW
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO -60 V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO -5 V
Collector Current
IC -150 mA
Collector Dissipation
Junction Temperature
Storage Temperature
PC
TJ
TSTG
250
150
-55~+150
mW
oC
oC
Electrical Characteristics (TA=25oC)
Characteristic
Symbol
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
IC= -5µA, IE=0
IC= -1mA, IB=0
IE= -50µA, IC=0
VCB= -60V, IE=0
VEB= -5V, IC=0
VCE= -6V, IC= -1mA
IC= -100mA, IB= -10mA
VCE= -6V, IC= -10mA
f= 30MHz
Min Typ Max Unit
-60 V
-50 V
-5 V
0.1 µA
01 µA
90 200 600
-0.18 -0.3
V
50 180
MHz
hFE CLASSIFICATION
Classification
R
hFE 90-180
Q
135-270
P
200-400
K
300-600
Elite Enterprises (H.K.) Co., Ltd.
Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: [email protected]
Part No.: A733
Page: 1 / 1
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