13001 Datasheet PDF - Elite
| Part Number | 13001 | |
| Description | NPN Epitaxial Silicon Transistor | |
| Manufacturers | Elite | |
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13001
NPN Epitaxial Silicon Transistor
Features
Collector-Emitter Voltage: VCEO= 400V
Collector Dissipation: PC(max)= 1000mW
TO-126
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
600
400
7
200
1000
150
-55~+150
V
V
V
mA
mW
oC
oC
1. Emitter 2. Collector 3. Base
Electrical Characteristics (TA=25oC)
Characteristic
Symbol
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-emitter Voltage
Transition Frequency
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
ff
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=600V, IE=0
VCE=400V, IB=0
VEB=7V, IC=0
VCE=20V, IC=20mA
VCE=10V, IC=0.25mA
IC=50mA, IB=10mA
IC=50mA, IB=10mA
IE= 100mA
VCE=20V, IC=20mA
f=1MHz
Fall Time
Storage Time
tf IC=50mA, IB1=-1B2=5mA,
ts Vcc= 45V
Min
600
400
7
10
5
8
Max
100
200
100
40
0.5
1.2
1.1
0.3
1.5
Unit
V
V
V
A
A
A
V
V
V
MHz
µS
µS
hFE(1) CLASSIFICATION
Classification
hFE(1)
10-15
15-20
20-25
25-30
30-35
35-40
Elite Enterprises (H.K.) Co., Ltd.
Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: [email protected]
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Part No.: 13001
Page: 1
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 13001 electronic component. |
| Information | Total 1 Pages | |
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| Download | [ 13001.PDF Datasheet ] | |
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