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What is 54N06T?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "PHP54N06T".


54N06T Datasheet PDF - NXP Semiconductors

Part Number 54N06T
Description PHP54N06T
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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PHP54N06T
N-channel enhancement mode field-effect transistor
Rev. 01 — 14 February 2001
Product specification
M3D307
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP54N06T in SOT78 (TO-220AB).
2. Features
s Low on-state resistance
s 175 °C rated.
3. Applications
s DC to DC converters
s Switched mode power supplies.
c
4. Pinningc information
Table 1: Pinning - SOT78, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
3 source (s)
mb mounting base;
connected to drain (d)
MBK106
123
SOT78 (TO-220AB)
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
Free Datasheet http://www.Datasheet4U.com

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54N06T equivalent
Philips Semiconductors
PHP54N06T
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
ID = 0.25 mA; VGS = 0 V
voltage
Tj = 25 °C
55 − − V
Tj = 55 °C
50 − − V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = 55 °C
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A;
Figure 7 and 8
234V
1−−V
− − 4.4 V
0.05 10
µA
− − 500 µA
2 100 nA
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
17 20 m
− − 40 m
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
VDD = 44 V; ID = 40 A;
VGS = 10 V; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 1.2 ;
VGS = 10 V; RG = 10 ;
from drain lead 6 mm from
package to centre of die
36
8.4
11.5
1200
290
179
15
74
70
40
4.5
1592
356
240
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
from contact screw on
mounting base to centre of
die
3.5
nH
Ls
internal source inductance from source lead to source
bond pad
7.5
nH
9397 750 08022
Product specification
Rev. 01 — 14 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
5 of 13
Free Datasheet http://www.Datasheet4U.com


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54N06TThe function is PHP54N06T. NXP SemiconductorsNXP Semiconductors

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