54N06T Datasheet PDF - NXP Semiconductors
Part Number | 54N06T | |
Description | PHP54N06T | |
Manufacturers | NXP Semiconductors | |
Logo | ||
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N-channel enhancement mode field-effect transistor
Rev. 01 — 14 February 2001
Product specification
M3D307
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHP54N06T in SOT78 (TO-220AB).
2. Features
s Low on-state resistance
s 175 °C rated.
3. Applications
s DC to DC converters
s Switched mode power supplies.
c
4. Pinningc information
Table 1: Pinning - SOT78, simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
3 source (s)
mb mounting base;
connected to drain (d)
MBK106
123
SOT78 (TO-220AB)
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
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Philips Semiconductors
PHP54N06T
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
ID = 0.25 mA; VGS = 0 V
voltage
Tj = 25 °C
55 − − V
Tj = −55 °C
50 − − V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A;
Figure 7 and 8
234V
1−−V
− − 4.4 V
−
0.05 10
µA
− − 500 µA
− 2 100 nA
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
− 17 20 mΩ
− − 40 mΩ
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
VDD = 44 V; ID = 40 A;
VGS = 10 V; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω;
from drain lead 6 mm from
package to centre of die
−
−
−
−
−
−
−
−
−
−
−
36
8.4
11.5
1200
290
179
15
74
70
40
4.5
−
−
−
1592
356
240
−
−
−
−
−
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
from contact screw on
mounting base to centre of
die
−
3.5 −
nH
Ls
internal source inductance from source lead to source
−
bond pad
7.5 −
nH
9397 750 08022
Product specification
Rev. 01 — 14 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
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Information | Total 13 Pages | |
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