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MDP7N60B / MDF7N60B
N-Channel MOSFET 600V, 7.0A, 1.15Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
VDS = 660V
ID = 7.0A
RDS(ON) ≤ 1.15Ω
Applications
@ Tjmax
@ VGS = 10V
@ VGS = 10V
Power Supply
PFC
High Current, High Speed Switching
D
TO-220
MDP Series
TO-220F
MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
G
S
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
MDP7N60B MDF7N60B
600
660
±30
7.0 7.0*
4.4 4.4*
28 28*
131 42
1.05 0.33
13.1
4.5
220
-55~150
Unit
V
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Symbol
RθJA
RθJC
MDP7N60B
62.5
0.95
MDF7N60B
62.5
3.01
Unit
oC/W
June. 2010 Version 1.3
1 MagnaChip Semiconductor Ltd.
Free Datasheet http://www.Datasheet4U.com
15000
12000
9000
single Pulse
RthJC = 0.95℃/W
TC = 25℃
6000
3000
0
1E-5 1E-4 1E-3 0.01
0.1
1
10
Pulse Width (s)
Fig.13 Single Pulse Maximum Power
Dissipation MDP7N60B(TO-220)
14000
12000
10000
single Pulse
RthJC = 3.01℃/W
TC = 25℃
8000
6000
4000
2000
0
1E-5 1E-4 1E-3 0.01
0.1
1
10
Pulse Width (s)
Fig.14 Single Pulse Maximum Power
Dissipation MDF7N60B(TO-220F)
8
7
6
5
4
3
2
1
0
25 50 75 100 125 150
TC, Case Temperature [℃]
Fig.15 Maximum Drain Current vs. Case
Temperature
June. 2010 Version 1.3
5 MagnaChip Semiconductor Ltd.
Free Datasheet http://www.Datasheet4U.com