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PDF AUIRFR2405 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFR2405 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Features
l Advanced Planar Technology
● Dynamic dV/dT Rating
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUTOMOTIVE GRADE
PD - 97688A
AUIRFR2405
HEXFET® Power MOSFET
D V(BR)DSS
55V
RDS(on) typ.
11.8mΩ
hG
max
ID (Silicon Limited)
16mΩ
56A
S ID (Package Limited)
30A
D
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This ben-
efit combined with the fast switching speed and rugge-
dized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
G
Gate
S
G
D-Pak
AUIRFR2405
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
cIDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Max.
56h
40h
30
220
110
0.71
± 20
130
34
11
5.0
-55 to + 175
300
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/30/11
Free Datasheet http://www.Datasheet4U.com
1 page  
AUIRFR2405
4000
3200
2400
VCGissS
=
=
0V,
Cgs
+
f = 1MHz
Cgd , Cds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1600
800
0
1
Coss
Crss
10
VDS , Drain-to-Source Voltage (V)
100
20 ID = 34A
16
12
VVVDDDSSS
=
=
=
44V
27V
11V
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 20 40 60 80 100
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175° C
TJ = 25° C
10
1 VGS = 0 V
0.4 0.8 1.2 1.6 2.0 2.4
VSD ,Source-to-Drain Voltage (V)
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100 10us
100us
10
1ms
TTJC
=
=
25 ° C
175 ° C
Single Pulse
1
1
10
10ms
100
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
Free Datasheet http://www.Datasheet4U.com
5 Page 
AUIRFR2405
Ordering Information
Base part
number
AUIRFR2405
Package Type Standard Pack
Dpak
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
75
2000
3000
3000
AUIRFR2405
AUIRFR2405TR
AUIRFR2405TRL
AUIRFR2405TRR
www.irf.com
11
Free Datasheet http://www.Datasheet4U.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRFR2405.PDF ] | |
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