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What is AUIRFR2607Z?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "Power MOSFET ( Transistor )".


AUIRFR2607Z Datasheet PDF - International Rectifier

Part Number AUIRFR2607Z
Description Power MOSFET ( Transistor )
Manufacturers International Rectifier 
Logo International Rectifier Logo 


There is a preview and AUIRFR2607Z download ( pdf file ) link at the bottom of this page.





Total 13 Pages



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No Preview Available ! AUIRFR2607Z datasheet, circuit

AUTOMOTIVE MOSFET
PD - 96323
AUIRFR2607Z
HEXFET® Power MOSFET
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
D V(BR)DSS
75V
RDS(on) typ. 17.6m
G max. 22m
ID (Silicon Limited)
S
45A k
ID (Package Limited)
42A
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
D
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
S
D
G
D-Pak
AUIRFR2607Z
variety of other applications.
GDS
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
45 k
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
32 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
™IDM Pulsed Drain Current
42
180
PD @TC = 25°C Power Dissipation
110 W
Linear Derating Factor
0.72 W/°C
VGS
EAS
EAS (Tested )
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally limited)
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
± 20
96
96
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Typ.
–––
–––
–––
Max.
1.38
50
110
Units
°C/W
www.irf.com
1
08/24/10
Free Datasheet http://www.Datasheet4U.com

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AUIRFR2607Z equivalent
AUIRFR2607Z
2400
2000
1600
1200
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
800
400
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID= 30A
16
12
VDS= 60V
VDS= 30V
VDS= 12V
8
4
0
0
FOR TEST CIRCUIT
SEE FIGURE 13
10 20 30 40 50
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0
10.0
TJ = 175°C
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1.0 TJ = 25°C
0.1
0.0
VGS = 0V
0.4 0.8 1.2 1.6 2.0
VSD, Source-to-Drain Voltage (V)
2.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
10msec
1msec
DC
100 1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
Free Datasheet http://www.Datasheet4U.com


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Part Details

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Information Total 13 Pages
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