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PDF AUIRFI4905 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFI4905 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
Features
Advanced Planar Technology
P-Channel MOSFET
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance
per silicon area. This benefit combined with the fast
switching speed an ruggedized device design that
HEXFET Power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
G
AUIRFI4905
HEXFET® Power MOSFET
D VDSS
-55V
RDS(on) max.
20m
IS D (Silicon Limited)
-39A
D
G
Gate
S
D
G
TO-220 Full-Pak
D
Drain
S
Source
Base Part Number
AUIRFI4905
Package Type
TO-220 Full-Pak
Standard Pack
Form
Tube
Quantity
50
Orderable Part Number
AUIRFI4905
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC (Bottom) = 25°C Continuous Drain Current, VGS @ -10V (Silicon Limited)
ID @ TC (Bottom) = 100°C
IDM
PD @TC (Bottom) = 25°C
Continuous Drain Current, VGS @ -10V (Silicon Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Thermal Resistance
RJC
RJA
Symbol
Junction-to-Case
Junction-to-Ambient
Parameter
Max.
-39
-27
-155
55
0.37
± 20
1247
See Fig. 14, 15, 22a, 22b
Units
A
W
W/°C
V
mJ
A
-55 to + 175
°C
Typ.
–––
–––
Max.
2.73
65
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
September 11, 2013
Free Datasheet http://www.Datasheet4U.com
1 page  
5000
4000
3000
ID
TOP -8.8A
-13A
BOTTOM -23A
2000
1000
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. Drain Current
100
10
AUIRFI4905
4.5
4.0
3.5
3.0
2.5 ID = -250µA
ID = -1.0mA
ID = -1.0A
2.0
1.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs. Temperature
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
1.0E-01
1.0E+00
1.0E+01
Fig 14. Typical Avalanche Current vs. Pulse Width
1400
1200
1000
800
600
400
200
0
25
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = -23A
50 75 100 125 150 175
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
5 www.irf.com © 2013 International Rectifier
September 11, 2013
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AUIRFI4905.PDF ] | |
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