|
|
PDF AUIRF7732S2TR1 Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7732S2TR1 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AUIRF7732S2TR1 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
• Advanced Process Technology
• Optimized for Automotive DC-DC, Motor Drive and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead free, RoHS and Halogen free
AUIARUFI7R7F3727S322TSR2/PTRbF1
DirectFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
40V
5.5mΩ
6.95mΩ
ID (Silicon Limited)
Qg
55A
30nC
S
DG
D
S
Applicable DirectFET Outline and Substrate Outline
SB SC
M2
M4
SC
L4
DirectFET ISOMETRIC
L6 L8
Description
The AUIRF7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® pack-
aging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than
an SO-8 and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB
assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding
the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive
power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET®
packaging platform coupled with the latest silicon technology allows the AUIRF7732S2 to offer substantial system level savings and
performance improvement specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV
platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area . Additional
features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Ordering Information
Base Part Number
Package Type
AUIRF7732S2
AUIRF7732S2
DirectFET2 Small -Can
DirectFET2 Small -Can
Standard Pack
Form
Tape and Reel
Tape and Reel Option 1
Quantity
4800
1000
Complete part Number
AUIRF7732S2TR
AUIRF7732S2TR1
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
IDM
PD @TC = 25°C
PEDAS@TA = 25°C
EAS (tested)
IAR
EAR
TP
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
i eContinuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
fPower Dissipation
ePower Dissipation
hSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÃgAvalanche Current
gRepetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
40
± 20
55
39
14
220
41
2.5
45
100
See Fig. 18a,18b,16,17
260
-55 to + 175
Units
V
A
W
mJ
A
mJ
°C
HEXFET® is a registered trademark of International Rectifier.
1 www.irf.com © 2012 International Rectifier
May 08, 2012
Free Datasheet http://www.Datasheet4U.com
1 page  
AUIRF7732S2TR/TR1
4.0 1000
3.5
3.0 100
2.5
ID = 50μA
2.0
ID = 250μA
ID = 1.0mA
ID = 1.0A
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 7. Typical Threshold Voltage vs. Junction Temperature
TJ = -40°C
TJ = 25°C
TJ = 175°C
10
VGS = 0V
1.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
100
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
80 TJ = 25°C
Crss = C gd
Coss = Cds + Cgd
60 Ciss
TJ = 175°C
1000
Coss
40
Crss
20
0
0
VDS = 5.0V
380μs PULSE WIDTH
20 40 60 80
ID,Drain-to-Source Current (A)
100
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 9. Typical Forward Transconductance vs. Drain Current
14.0
ID= 33A
12.0
VDS= 32V
10.0
VDS= 20V
VDS= 8.0V
8.0
6.0
4.0
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
60
50
40
30
20
2.0 10
0.0
0
5 10 15 20 25 30 35
QG, Total Gate Charge (nC)
40
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
5 www.irf.com © 2012 International Rectifier
Fig 12. Maximum Drain Current vs. Case Temperature
May 08, 2012
Free Datasheet http://www.Datasheet4U.com
5 Page 
AUIRF7732S2TR/TR1
Qualification Information†
Qualification Level
Automotive
(per AEC-Q101) ††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of
the higher Automotive level.
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
RoHS Compliant
Charged Device
Model
SMALL-CAN
MSL1, 260°C
Class M2 (+/- 200V)†††
AEC-Q101-002
Class H1B (+/- 1000V)†††
AEC-Q101-001
N/A
AEC-Q101-005
Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
11 www.irf.com © 2012 International Rectifier
May 08, 2012
Free Datasheet http://www.Datasheet4U.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7732S2TR1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AUIRF7732S2TR | Power MOSFET ( Transistor ) |  Infineon |
| AUIRF7732S2TR | Power MOSFET ( Transistor ) | International Rectifier |
| AUIRF7732S2TR1 | Power MOSFET ( Transistor ) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |