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What is AUIRF7734M2TR1?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "Power MOSFET ( Transistor )".


AUIRF7734M2TR1 Datasheet PDF - International Rectifier

Part Number AUIRF7734M2TR1
Description Power MOSFET ( Transistor )
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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PD - 96413A
AUTOMOTIVE GRADE AUIRF7734M2TR
AUIRF7734M2TR1
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and
Reliability
Lead Free, RoHS Compliant and Halogen Free
Automotive Qualified *
Automotive DirectFET® Power MOSFET ‚
V(BR)DSS
40V
RDS(on) typ.
3.8mΩ
max.
4.9mΩ
ID (Silicon Limited)
72A
Qg 48nC
DG
S
S
D
Applicable DirectFET® Outline and Substrate Outline 
M 2 DirectFET®ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The AUIRF7734M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF7734M2 to offer substantial system level savings and performance improve-
ment specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes
the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust
and reliable device for high current automotive applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
IDM
PD @TC = 25°C
PEDAS@TA = 25°C
EAS (tested)
IAR
EAR
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
gPulsed Drain Current
fPower Dissipation
ePower Dissipation
hSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÃgAvalanche Current
gRepetitive Avalanche Energy
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
40
± 20
72
51
17
288
46
2.5
56
164
See Fig. 18a, 18b, 16, 17
270
-55 to + 175
V
A
W
mJ
A
mJ
°C
RθJA
RθJA
RθJA
RθJCan
RθJ-PCB
Parameter
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Junction-to-PCB Mounted
fLinear Derating Factor
Typ.
–––
12.5
20
–––
1.0
Max.
60
–––
–––
3.3
–––
0.30
Units
°C/W
W/°C
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
04/19/12
Free Datasheet http://www.Datasheet4U.com

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AUIRF7734M2TR1 equivalent
AUIRF7734M2TR/TR1
4.0 1000
3.5 TJ = -40°C
100 TJ = 25°C
3.0 TJ = 175°C
2.5 10
2.0
ID = 1.0A
ID = 1.0mA
ID = 250μA
1.5 ID = 100μA
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 7. Typical Threshold Voltage vs. Junction Temperature
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
150
TJ = 25°C
100000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
100 10000
TJ = 175°C
50
VDS = 5V
380μs PULSE WIDTH
0
0 20 40 60 80 100 120
ID,Drain-to-Source Current (A)
Fig 9. Typical Forward Transconductance vs. Drain Current
14
12
ID= 43A
VDS= 32V
VDS= 20V
VDS= 8V
10
8
6
4
2
0
0 15 30 45 60 75
QG, Total Gate Charge (nC)
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
www.irf.com
1000
Ciss
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
75
60
45
30
15
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 12. Maximum Drain Current vs. Case Temperature
5
Free Datasheet http://www.Datasheet4U.com


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