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PDF SVF4N65FG Data sheet ( Hoja de datos )
| Número de pieza | SVF4N65FG | |
| Descripción | 650V N-channel enhancement mode MOSFET | |
| Fabricantes | SL | |
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SVF4N65T/F(G)/M_Datasheet
4A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N65T/F(G)/M is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 4A,650V, RDS(on)(typ)=2.5Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF4N65T
SVF4N65F
SVF4N65FG
SVF4N65M
Package
TO-220-3L
TO-220F-3L
TO-220F-3L
TO-251-3L
Marking
SVF4N65T
SVF4N65F
SVF4N65FG
SVF4N65M
Material
Pb free
Pb free
Halogen free
Pb free
Packing
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HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.01.18
Page 1 of 9
1 page  
SVF4N65T/F(G)/M_Datasheet
TYPICAL CHARACTERISTICS(continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes:
1. VGS=0V
2. ID=250µA
-50 0 50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-1. Max. Safe Operating
Area(SVF4N65T)
102
Operation in This Area is
Limited by RDS(ON)
101 100µs
1ms
10ms
100 DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 9-3. Max. Safe Operating
Area(SVF4N65M)
102
Operation in This Area is
Limited by RDS(ON)
101 100µs
1ms
10ms
100 DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 8. On-resistance Variation
3.0 vs. Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes:
1. VGS=10V
2. ID=2.0A
-50 0 50 100 150 200
Junction Temperature – TJ(°C)
Figure 9-2. Max. Safe Operating
Area(SVF4N65F(G))
102
Operation in This Area is
Limited by RDS(ON)
101 100µs
1ms
100 10ms
DC
10-1
10-2
100
Notes:
1.TC=25°C
2.Tj=150°C
3.Single Pulse
101 102
Drain Source Voltage - VDS(V)
103
Figure 10. Maximum Drain Current vs.
Case Temperature
5
4
3
2
1
0
25 50 75 100 125 150
Case Temperature – TC(V)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.01.18
Page 5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SVF4N65FG.PDF ] | |
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