60N20F Datasheet PDF - IXYS
Part Number | 60N20F | |
Description | IXFH60N20F | |
Manufacturers | IXYS | |
Logo | ||
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HiPerRFTM
Power MOSFET
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH60N20F
IXFT60N20F
VDSS =
ID25 =
≤RDS(on)
trr ≤
200V
60A
38mΩ
200ns
TO-247
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
200
200
± 20
± 30
60
240
60
1.5
V
V
V
V
A
A
A
J
10 V/ns
320
-55 ... +150
150
-55 ... +150
300
260
W
°C
°C
°C
°C
°C
1.13/10
6
4
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
200 V
3.0 5.0 V
± 100 nA
50 μA
1.5 mA
38 mΩ
TO-268
TAB
GS
TAB
G = Gate D = Drain
S = Source TAB = Drain
Features
z International standard packages
z Avalanche Rated
z RF capable MOSFETs
z Double metal process for low gate
resistnace
z Low package inductance
z Fast intrinsic diode
Advantages
z Easy to mount
z Space savings
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies, >500kHz switching
z DC-DC Converters
z Laser Drivers
z 13.5 Mhz industrial applications
z Pulse generation
© 2008 IXYS CORPORATION, All rights reserved
DS98885A(11/08)
Free Datasheet http://www.0PDF.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 60N20F electronic component. |
Information | Total 2 Pages | |
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Download | [ 60N20F.PDF Datasheet ] |
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