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2PG002 Datasheet PDF - Panasonic

Part Number 2PG002
Description N-Channel Enhancement Mode IGBT
Manufacturers Panasonic 
Logo Panasonic Logo 



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2PG002 datasheet, circuit
IGBT
This product complies with the RoHS Directive (EU 2002/95/EC).
2PG002
N-channel enhancement mode IGBT
For plasma display panel drive
For high speed switching circuits
Features
Low collector-emitter saturation voltage: VCE(sat) < 2.4 V
High speed hall time: tf = 190 nsec(typ.)
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol
Collector-emitter voltage (E-B short)
Gate-emitter voltage (E-B short)
Collector current
Peak collector current *
VCES
VGES
IC
ICP
Power dissipation
Junction temperature
Ta = 25°C
Storage temperature
Note) *: PW 10 us, Duty ≤ 1.0%
PC
Tj
Tstg
Rating
410
±30
40
160
40
2.0
150
–55 to +150
Unit
V
V
A
A
W
W
°C
°C
Package
Code
TO-220F-A1
Marking Symbol: 2PG002
Pin Name
1. Gate
2. Collector
3. Emitter
Internal Connection
C
G
E
Electrical Characteristics TC = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ
Collector-emitter voltage (E-B short)
VCES IC = 1 mA, VGE = 0
410
Collector-emitter cutoff current (E-B short) ICES VCE = 328 V, VGE = 0
Gate-emitter cutoff current (E-B short)
IGES VGE = ±30 V, VCE = 0
Gate-emitter threshold voltage
VGE(th) VCE = 10 V, IC = 1.0 mA
3.0
Collector-emitter saturation voltage
VCE(sat) VGE = 15 V, IC = 40 A
1.9
Short-circuit input capacitance (Common emitter) Cies
1200
Short-circuit output capacitance (Common emitter) Coes VCE = 25 V, VGE = 0, f = 1 MHz
150
Reverse transfer capacitance (Common emitter) Cres
25
Gate charge load
Qg
51
Gate-emitter charge
Qge VCC = 200 V, IC = 40 A, VGE = 15 V
7
Gate-collector charge
Qgc
22
Turn-on delay time
td(on)
96
Rise time
Turn-off delay time
tr
td(off)
VCC = 200 V, IC = 40 A,
RL 5 , VGE = 15 V
390
200
Fall time
tf
190
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Max
50
±1.0
5.5
2.4
Unit
V
mA
mA
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Publication date : June 2007
SJN00004AED
1
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