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PDF K15A60U Data sheet ( Hoja de datos )
| Número de pieza | K15A60U | |
| Descripción | TK15A60U | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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 1. N-Ch, 600V, MOSFET - Toshiba  Hay una vista previa y un enlace de descarga de K15A60U (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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TK15A60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)
TK15A60U
Switching Regulator Applications
Unit: mm
• Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
• Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 600 V
Gate-source voltage
VGSS ±30 V
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
ID
IDP
PD
EAS
15
A
30
40 W
81 mJ
1: Gate
2: Drain
3: Source
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
IAR
EAR
Tch
Tstg
15
4
150
-55 to 150
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
⎯
SC-67
2-10U1B
Note: Using continuously under heavy loads (e.g. the application of
Weight: 1.7 g (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.63 mH, RG = 25 Ω, IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
Start of commercial production
2008-02
1 2013-11-01
Free Datasheet http://www.0PDF.com
1 page  
TK15A60U
rth – tw
10
1
0.1
0.01
Duty = 0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
0.001
10 μ
100 μ
PDM
t
T
Duty = t/T
Rth (ch-c) = 3.125°C/W
1m
10 m
100 m
1
10
Pulse width tw (s)
Safe operating area
100
ID max (Pulse) *
ID max (Continuous)
10
100 μs *
1 ms *
1 DC operation
Tc = 25°C
0.1
* Single nonrepetitive
0.01
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
0.1
1
10
VDSS max
100 1000
Drain−source voltage VDS (V)
EAS – Tch
100
80
60
40
20
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVEFORM
RG = 25 Ω
VDD = 90 V, L = 0.63mH
ΕAS
=
1
2
⋅L ⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2013-11-01
Free Datasheet http://www.0PDF.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K15A60U.PDF ] | |
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