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PDF APM4568J Data sheet ( Hoja de datos )
| Número de pieza | APM4568J | |
| Descripción | Dual Enhancement Mode MOSFET | |
| Fabricantes | ANPEC | |
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APM4568J
Dual Enhancement Mode MOSFET (N- and P-Channel)
Features
• N-Channel
40V/7.5A,
RDS(ON) =21mΩ (typ.) @ VGS = 10V
RDS(ON) =30mΩ (typ.) @ VGS = 4.5V
• P-Channel
-40V/-6A,
RDS(ON) =36mΩ (typ.) @ VGS =-10V
RDS(ON) =50mΩ (typ.) @ VGS =-4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Pin Description
D1
D1
D2
D2
S1
G1
S2
G2
Top View of DIP − 8
(8) (7)
D1 D1
(3)
S2
(4)
G2
(2)
G1
S1 D2 D2
(1) (5) (6)
N-Channel MOSFET P-Channel MOSFET
Ordering and Marking Information
APM4568
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
J : DIP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube
Assembly Material
G : Halogen and Lead Free Device
APM4568 J :
APM4568
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Dec., 2008
1
www.anpec.com.tw
Free Datasheet http://www.nDatasheet.com
1 page  
APM4568J
Typical Operating Characteristics (Cont.)
N-Channel
30
25
Output Characteristics
V = 5, 6, 7, 8, 9, 10V
GS
4.5V
20
15 4V
Drain-Source On Resistance
50
45
40
V =4.5V
35 GS
30
10
3.5V
5
3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-Source Voltage (V)
25
V =10V
GS
20
15
10
0 5 10 15 20 25 30
ID - Drain Current (A)
Drain-Source On Resistance
50
I =7.5A
D
45
40
35
30
25
20
15
10
1 2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I
DS
=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Dec., 2008
5
www.anpec.com.tw
Free Datasheet http://www.nDatasheet.com
5 Page 
APM4568J
Reflow Condition (IR/Convection or VPR Reflow)
TP tp
Ramp-up
TL
Tsmax
tL
Tsmin
ts
Preheat
Ramp-down
Critical Zone
TL to TP
25 t 25 °C to Peak
Time
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B, A102
MIL-STD-883D-1011.9
Description
245°C, 5 sec
1000 Hrs Bias @125°C
168 Hrs, 100%RH, 121°C
-65°C~150°C, 200 Cycles
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
3°C/second max.
100°C
150°C
60-120 seconds
3°C/second max.
150°C
200°C
60-180 seconds
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
183°C
60-150 seconds
See table 1
217°C
60-150 seconds
See table 2
Time within 5°C of actual
Peak Temperature (tp)
10-30 seconds
20-40 seconds
Ramp-down Rate
6°C/second max.
6°C/second max.
Time 25°C to Peak Temperature
6 minutes max.
8 minutes max.
Note: All temperatures refer to topside of the package. Measured on the body surface.
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Dec., 2008
11
www.anpec.com.tw
Free Datasheet http://www.nDatasheet.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet APM4568J.PDF ] | |
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