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Datasheet NTGD3149C Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NTGD3149C | Power MOSFET, Transistor NTGD3149C
Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual
Features
Power MOSFET
• • • • • •
Complementary N−Channel and P−Channel MOSFET Small Size (3 x 3 mm) Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Resp | ON Semiconductor | mosfet |
NTG Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NTG | High Accuracy NTC Thermistors
MCC
Micro Commercial Components
TM
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
NTG Series
• • •
Features
DO-35 glass package High stability Wide range of operating temperature from -50℃ up to 25 MCC thermistor | | |
2 | NTG222-3950 | High Accuracy NTC Thermistors
MCC
Micro Commercial Components
TM
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
NTG222-3950
Features
• • • DO-35 glass package High stability Wide range of operating temperature from -50℃ up to 25 MCC thermistor | | |
3 | NTGD1100L | Power MOSFET, Transistor NTGD1100L
8 V, ±3.3 A, Load Switch with Level−Shift, P−Channel, TSOP−6
The NTGD1100L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are neede ON Semiconductor mosfet | | |
4 | NTGD3133P | Power MOSFET, Transistor
NTGD3133P Power MOSFET
−20 V, −2.5 A, P−Channel, TSOP−6 Dual
Features
• • • • • • • • •
Reduced Gate Charge for Fast Switching −2.5 V Gate Rating Leading Edge Trench Technology for Low On Resistance Independent Devices to Provide Design Flexibility ON Semiconductor mosfet | | |
5 | NTGD3147F | Power MOSFET and Schottky Diode NTGD3147F Power MOSFET and Schottky Diode
Features
−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6
• • • • • •
Fast Switching Low Gate Change Low RDS(on) Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device
h ON Semiconductor mosfet | | |
6 | NTGD3148N | Power MOSFET, Transistor NTGD3148N Power MOSFET
20 V, 3.5 A, Dual N-Channel, TSOP-6
Features
•ăLow Threshold Levels, VGS(th) < 1.5 V •ăLow Gate Charge (3.8 nC) •ăLeading Edge Trench Technology of Low RDS(on) •ăHigh Power and Current Handling Capability •ăThis is a Pb-Free Device
Applications
http://onsemi.c ON Semiconductor mosfet | | |
7 | NTGD3149C | Power MOSFET, Transistor NTGD3149C
Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual
Features
Power MOSFET
• • • • • •
Complementary N−Channel and P−Channel MOSFET Small Size (3 x 3 mm) Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Resp ON Semiconductor mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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