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What is HY1606P?

This electronic component, produced by the manufacturer "HOOYI", performs the same function as "N-Channel Enhancement Mode MOSFET".


HY1606P Datasheet PDF - HOOYI

Part Number HY1606P
Description N-Channel Enhancement Mode MOSFET
Manufacturers HOOYI 
Logo HOOYI Logo 


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Total 11 Pages



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No Preview Available ! HY1606P datasheet, circuit

HY1606P/B
N-Channel Enhancement Mode MOSFET
Features
60V/66A
RDS(ON) = 10.4 m(typ.) @ VGS=10V
100% avalanche tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS
G
TO-220FB-3L
DS
G
TO-263-2L
Applications
Switching application
Power Management for Inverter Systems.
D
G N-Channel MOSFET
Ordering and Marking Information
S
PB
HY1606 HY1606
YYÿ XXXJWW G YYÿ XXXJWW G
Package Code
P : TO-220FB-3L
Date Code
YYXXX WW
B: TO-263-2L
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi.cc
141225

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HY1606P equivalent
HY1606P/B
Typical Operating Characteristics (Cont.)
Output Characteristics
160
V = 6,7,8,9,10V
GS
140
120 5.5V
100
80
60
5V
40
20 4.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
16
14
12 VGS =10V
10
8.0
6.0
0
20 40 60 80 100
ID - Drain Current (A)
Drain-Source On Resistance
18
I =33A
DS
17
15
13
11
9
7
4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I
DS
=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
5 www.hooyi.cc


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HY1606P electronic component.


Information Total 11 Pages
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Download [ HY1606P.PDF Datasheet ]

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Featured Datasheets

Part NumberDescriptionMFRS
HY1606APThe function is N-Channel Enhancement Mode MOSFET. HOOYIHOOYI
HY1606BThe function is N-Channel Enhancement Mode MOSFET. HOOYIHOOYI
HY1606PThe function is N-Channel Enhancement Mode MOSFET. HOOYIHOOYI

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