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PDF HY1606AP Data sheet ( Hoja de datos )
| Número de pieza | HY1606AP | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | HOOYI | |
| Logotipo |  |
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HY1606AP
Features
• 60V/60A,
RDS(ON)=10.5 mΩ (typ.) @ VGS=10V
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
N-Channel Enhancement Mode MOSFET
Pin Description
G
D
S
D
Applications
• Power Management for Inverter Systems.
G
Ordering and Marking Information
S
N-Channel MOSFET
P
HY1606A
Yÿ YWWJ G
Package Code
P : TO220-3L
Date Code
YYWW
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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HY1606AP
Typical Operating Characteristics (Cont.)
Output Characteristics
160
V = 7,8,9,10V
GS
140
120 6V
100
80
5.5V
60
40 5V
20 4.5V
4V
0
012345
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
17
16
15
14
V =10V
GS
13
12
11
10
9
0 20 40 60 80 100
ID - Drain Current (A)
Drain-Source On Resistance
20
I =30A
DS
18
16
14
12
10
8
6
4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.8
I
DS
=250µA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HY1606AP.PDF ] | |
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