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What is K9GAG08U0F?

This electronic component, produced by the manufacturer "Samsung", performs the same function as "16Gb F-die NAND Flash".


K9GAG08U0F Datasheet PDF - Samsung

Part Number K9GAG08U0F
Description 16Gb F-die NAND Flash
Manufacturers Samsung 
Logo Samsung Logo 


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Rev.1.1, May. 2011
K9GAG08U0F
16Gb F-die NAND Flash
Multi-Level-Cell (2bit/cell)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
2011 Samsung Electronics Co., Ltd. All rights reserved.
-1-
Free Datasheet http://www.datasheet-pdf.com/

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K9GAG08U0F equivalent
K9GAG08U0F
datasheet
Rev. 1.1
FLASH MEMORY
1.0 INTRODUCTION
1.1 Features
Voltage Supply :
- VCC : 3.3V (2.7V ~ 3.6V)
- VccQ : 3.3V (2.7V ~ 3.6V )
Organization of Single die
- Memory Cell Array : 8,704 x 259.5K x 8bit
- Data Register : (8K + 512) x 8bit
Products
- K9GAG08U0A : Unit device x 1
Automatic Program and Erase
- Page Program : (8K + 512)Byte
- Block Erase : (1M + 64K)Byte
Page Read Operation
- Random Read(tR) : 200μs(Max.)
- Serial Access : 25ns(Min.)
Write Cycle Time
- Page Program time : 1.3ms(Typ.)
- Block Erase Time : 1.5ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- ECC Requirement : 24bit/1KB
- Endurance & Data Retention : Please refer to the Qualification repot
Command Driven Operation
Unique ID for Copyright Protection
Package
- K9GAG08U0F-SCB0 : Pb/Halogen-Free Package
48-Pin TSOP (12 x 20 / 1.00 mm pitch)
1.2 Product List
Part Number
K9GAG08U0F
Density
16Gb
Interface
Conventional
Organization
x8
Vcc Range
2.7V ~ 3.6V
VccQ Range
2.7V ~ 3.6V
PKG Type
48TSOP
1.3 General Description
The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation
can be performed in typical 1.3ms on the 8,704-byte page and an erase operation can be performed in typical 1.5ms on a (1M+64K)byte block. Data in
the data register can be read out at 25ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input.
The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining
of data. Even the write-intensive systems can take advantage of the K9GAG08U0Fs extended reliability of P/E cycles which are presented in the Qualifi-
cation report by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9GAG08U0F is an optimum solution for large nonvol-
atile storage applications such as solid state file storage and other portable applications requiring non-volatility.
-5-
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