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PDF MT29F8G08ADADAH4 Data sheet ( Hoja de datos )

Número de pieza MT29F8G08ADADAH4
Descripción NAND Flash Memory
Fabricantes Micron　
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No Preview Available ! MT29F8G08ADADAH4 Hoja de datos, Descripción, Manual

Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Features
NAND Flash Memory
MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4,
MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP,
MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,
MT29F8G08ADBDAH4, MT29F8G16ADADAH4, MT29F8G16ADBDAH4,
MT29F16G08AJADAWP
Features
• Open NAND Flash Interface (ONFI) 1.0-compliant1
• Single-level cell (SLC) technology
• Organization
– Page size x8: 2112 bytes (2048 + 64 bytes)
– Page size x16: 1056 words (1024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks
16Gb: 16,384 blocks
• Asynchronous I/O performance
– tRC/tWC: 20ns (3.3V), 25ns (1.8V)
• Array performance
– Read page: 25µs 3
– Program page: 200µs (TYP: 1.8V, 3.3V)3
– Erase block: 700µs (TYP)
• Command set: ONFI NAND Flash Protocol
• Advanced command set
– Program page cache mode4
– Read page cache mode 4
– One-time programmable (OTP) mode
– Two-plane commands 4
– Interleaved die (LUN) operations
– Read unique ID
– Block lock (1.8V only)
– Internal data move
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Ready/Busy# (R/B#) signal provides a hardware
method of detecting operation completion
• WP# signal: Write protect entire device
• First block (block address 00h) is valid when ship-
ped from factory with ECC. For minimum required
ECC, see Error Management.
• Block 0 requires 1-bit ECC if PROGRAM/ERASE cy-
cles are less than 1000
• RESET (FFh) required as first command after pow-
er-on
• Alternate method of device initialization (Nand_In-
it) after power up (contact factory)
• Internal data move operations supported within the
plane from which data is read
• Quality and reliability
– Data retention: 10 years
– Endurance: 100,000 PROGRAM/ERASE cycles
• Operating voltage range
– VCC: 2.7–3.6V
– VCC: 1.7–1.95V
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 48-pin TSOP type 1, CPL2
– 63-ball VFBGA
Notes:
1. The ONFI 1.0 specification is available at
www.onfi.org.
2. CPL = Center parting line.
3. See Program and Erase Characteristics for
tR_ECC and tPROG_ECC specifications.
4. These commands supported only with ECC
disabled.
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Free Datasheet http://www.datasheet-pdf.com/

1 page




MT29F8G08ADADAH4 pdf
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Features
List of Tables
Table 1: Signal Definitions ............................................................................................................................... 8
Table 2: Array Addressing – MT29F4G08 (x8) .................................................................................................. 16
Table 3: Array Addressing – MT29F4G16 (x16) ................................................................................................. 17
Table 4: Array Addressing – MT29F8G08 and MT29F16G08 (x8) ....................................................................... 18
Table 5: Array Addressing – MT29F8G16 ( x16) ................................................................................................ 19
Table 6: Asynchronous Interface Mode Selection ............................................................................................ 20
Table 7: Command Set .................................................................................................................................. 31
Table 8: Two-Plane Command Set .................................................................................................................. 33
Table 9: READ ID Parameters for Address 00h ................................................................................................. 36
Table 10: READ ID Parameters for Address 20h ............................................................................................... 38
Table 11: Parameter Page Data Structure ........................................................................................................ 40
Table 12: Parameter Page Data Structure ........................................................................................................ 45
Table 13: Feature Address Definitions ............................................................................................................. 49
Table 14: Feature Address 90h – Array Operation Mode ................................................................................... 50
Table 15: Feature Addresses 01h: Timing Mode ............................................................................................... 52
Table 16: Feature Addresses 80h: Programmable I/O Drive Strength ................................................................ 53
Table 17: Feature Addresses 81h: Programmable R/B# Pull-Down Strength ...................................................... 53
Table 18: Status Register Definition ................................................................................................................ 54
Table 19: Block Lock Address Cycle Assignments ............................................................................................ 85
Table 20: Block Lock Status Register Bit Definitions ........................................................................................ 88
Table 21: Error Management Details ............................................................................................................. 107
Table 22: Absolute Maximum Ratings ............................................................................................................ 111
Table 23: Recommended Operating Conditions ............................................................................................. 111
Table 24: Valid Blocks ................................................................................................................................... 111
Table 25: Capacitance ................................................................................................................................... 112
Table 26: Test Conditions .............................................................................................................................. 112
Table 27: DC Characteristics and Operating Conditions (3.3V) ....................................................................... 113
Table 28: DC Characteristics and Operating Conditions (1.8V) ....................................................................... 114
Table 29: AC Characteristics: Command, Data, and Address Input (3.3V) ........................................................ 115
Table 30: AC Characteristics: Command, Data, and Address Input (1.8V) ........................................................ 115
Table 31: AC Characteristics: Normal Operation (3.3V) .................................................................................. 116
Table 32: AC Characteristics: Normal Operation (1.8V) .................................................................................. 116
Table 33: Program/Erase Characteristics ....................................................................................................... 118
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN
5 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Free Datasheet http://www.datasheet-pdf.com/

5 Page





MT29F8G08ADADAH4 arduino
Micron Confidential and Proprietary
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
Signal Assignments
Figure 4: 63-Ball VFBGA, x16 (Balls Down, Top View)
1 2 3 4 5 6 7 8 9 10
A NC NC
NC NC
B NC
NC NC
C WP# ALE Vss CE# WE# R/B#
D Vcc RE# CLE NC NC NC
E NC NC NC NC NC NC
F NC NC NC NC Vss NC
G DNU Vcc LOCK1 I/O13 I/O15 DNU
H I/O8 I/O0 I/O10 I/O12 I/O14 Vcc
J I/O9 I/O1 I/O11 Vcc I/O5 I/O7
K Vss I/O2 I/O3 I/O4 I/O6 Vss
L NC NC
NC NC
M NC NC
NC NC
Note: 1. For the 3V device, G5 changes to DNU. NO LOCK function is available on the 3.3V de-
vice.
PDF: 09005aef83b25735
m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Free Datasheet http://www.datasheet-pdf.com/

11 Page







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