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15N03GH Datasheet PDF - Advanced Power Electronics

Part Number 15N03GH
Description AP15N03GH
Manufacturers Advanced Power Electronics 
Logo Advanced Power Electronics Logo 

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Advanced Power
Electronics Corp.
AP15N03GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Simple Drive Requirement
Fast Switching
Description
D
G
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP15N03GJ) is available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
80mΩ
15A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
G
D
S
TO-251(J)
Rating
30
± 20
15
9
50
28
0.22
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
4.8
110
Unit
/W
/W
Data & specifications subject to change without notice
200227032
Free Datasheet http://www.datasheet-pdf.com/

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15N03GH equivalent
AP15N03GH/J
16
14 I D =8A
12
10
V DS =16V
V DS =20V
V DS =24V
8
6
4
2
0
0 1 2 3 4 5 6 7 8 9 10
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
1000
Ciss
Coss
100
Crss
10
1 6 11 16 21 26 31
V DS (V)
Fig 10. Typical Capacitance Characteristics
100 3
10
T j =150 o C
T j =25 o C
1
2
1
0.1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
-50
0
50 100 150
T j , Junction Temperature( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Free Datasheet http://www.datasheet-pdf.com/


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