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PDF MJE340G Data sheet ( Hoja de datos )
| Número de pieza | MJE340G | |
| Descripción | Plastic Medium-Power NPN Silicon Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MJE340G
Plastic Medium-Power
NPN Silicon Transistor
This device is useful for high−voltage general purpose applications.
Features
• Suitable for Transformerless, Line−Operated Equipment
• Thermopad Construction Provides High Power Dissipation Rating
for High Reliability
• These Devices are Pb−Free and are RoHS Compliant*
• Complementary to MJE350
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
VCEO
VEB
IC
PD
300 Vdc
3.0 Vdc
500 mAdc
20 W
0.16 mW/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg –65 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
qJC
Max
6.25
Unit
_C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 1.0 mAdc, IB = 0)
VCEO(sus)
300
−
Vdc
Collector Cutoff Current
(VCB = 300 Vdc, IE = 0)
ICBO
mAdc
− 100
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
mAdc
− 100
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
hFE −
30 240
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 13
1
http://onsemi.com
0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
300 VOLTS, 20 WATTS
SCHEMATIC
COLLECTOR
2, 4
3
BASE
1
EMITTER
123
TO−225
CASE 77−09
STYLE 1
MARKING DIAGRAM
YWW
JE340G
Y = Year
WW = Work Week
JE340 = Device Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE340G
TO−225
(Pb−Free)
500 Units/Box
Publication Order Number:
MJE340/D
Free Datasheet http://www.datasheet-pdf.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MJE340G.PDF ] | |
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